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Volumn , Issue , 2013, Pages 192-202

Low-temperature sintering of a nanosilver paste for attaching large-area power chips

Author keywords

[No Author keywords available]

Indexed keywords

FRACTIONAL FACTORIAL DESIGNS; HIGHER JUNCTION TEMPERATURES; LOW-TEMPERATURE SINTERING; POWER ELECTRONICS DEVICES; PROCESSING PARAMETERS; SHRINKAGE BEHAVIOR; SINTERING TEMPERATURES; SOLVENT EVAPORATION;

EID: 84878867399     PISSN: 15505723     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISAPM.2013.6510403     Document Type: Conference Paper
Times cited : (8)

References (14)
  • 2
    • 34848862467 scopus 로고    scopus 로고
    • Low-temperature sintering with nano-silver paste in die-attached interconnection
    • Oct
    • T. Wang, X. Chen, G. Q. Lu, and G. Y. Lei, "Low-temperature sintering with nano-silver paste in die-attached interconnection, " Journal of Electronic Materials, vol. 36, no. 10, pp. 1333-1340, Oct, 2007.
    • (2007) Journal of Electronic Materials , vol.36 , Issue.10 , pp. 1333-1340
    • Wang, T.1    Chen, X.2    Lu, G.Q.3    Lei, G.Y.4
  • 3
    • 58149299812 scopus 로고    scopus 로고
    • Sintered nanosilver paste for high-temperature power semiconductor device attachment
    • J. N. Calata, T. G. Lei, and G. Q. Lu, "Sintered nanosilver paste for high-temperature power semiconductor device attachment, " International Journal of Materials & Product Technology, vol. 34, no. 1-2, pp. 95-110, 2009.
    • (2009) International Journal of Materials & Product Technology , vol.34 , Issue.1-2 , pp. 95-110
    • Calata, J.N.1    Lei, T.G.2    Lu, G.Q.3
  • 4
    • 0025800802 scopus 로고
    • Novel large area joining technique for improved power device performance
    • DOI 10.1109/28.67536
    • H. Schwarzbauer, and R. Kuhnert, "Novel large area joining technique for improved power device performance, " Industry Applications, IEEE Transactions on, vol. 27, no. 1, pp. 93-95, 1991. (Pubitemid 21663317)
    • (1991) IEEE Transactions on Industry Applications , vol.27 , Issue.1 PART 1 , pp. 93-95
    • Schwarzbauer, H.1    Kuhnert, R.2
  • 5
    • 33748585230 scopus 로고    scopus 로고
    • Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material
    • Sep
    • J. G. Bai, Z. Z. Zhang, J. N. Calata, and G. Q. Lu, "Low-temperature sintered nanoscale silver as a novel semiconductor device-metallized substrate interconnect material, " IEEE Transactions on Components and Packaging Technologies, vol. 29, no. 3, pp. 589-593, Sep, 2006.
    • (2006) IEEE Transactions on Components and Packaging Technologies , vol.29 , Issue.3 , pp. 589-593
    • Bai, J.G.1    Zhang, Z.Z.2    Calata, J.N.3    Lu, G.Q.4
  • 10
    • 79953743999 scopus 로고    scopus 로고
    • Power semiconductor joining through sintering of silver nanoparticles: Evaluation of influence of parameters time, temperature and pressure on density, strength and reliability
    • M. Knoerr, and A. Schletz, "Power semiconductor joining through sintering of silver nanoparticles: Evaluation of influence of parameters time, temperature and pressure on density, strength and reliability, " in Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on, 2010, pp. 1-6.
    • Integrated Power Electronics Systems (CIPS), 2010 6th International Conference on, 2010 , pp. 1-6
    • Knoerr, M.1    Schletz, A.2
  • 11
  • 13
  • 14
    • 84865259218 scopus 로고    scopus 로고
    • Shrinkage and Sintering Behavior of a Low-Temperature Sinterable Nanosilver Die-Attach Paste
    • Sep
    • T. Wang, M. H. Zhao, X. Chen, G. Q. Lu, K. Ngo, and S. F. Luo, "Shrinkage and Sintering Behavior of a Low-Temperature Sinterable Nanosilver Die-Attach Paste, " Journal of Electronic Materials, vol. 41, no. 9, pp. 2543-2552, Sep, 2012.
    • (2012) Journal of Electronic Materials , vol.41 , Issue.9 , pp. 2543-2552
    • Wang, T.1    Zhao, M.H.2    Chen, X.3    Lu, G.Q.4    Ngo, K.5    Luo, S.F.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.