-
1
-
-
78650909691
-
-
FCC, Washington, DC, USA, FCC 05-45
-
"Allocations and service rules for the 71-76 GHz, 81-86 GHz and 92-95 GHz bands," FCC, Washington, DC, USA, FCC 05-45, 2005.
-
(2005)
Allocations and Service Rules for the 71-76 GHz, 81-86 GHz and 92-95 GHz Bands
-
-
-
4
-
-
84899993822
-
Multidrive stacked-FET power amplifiers at 90 GHz in 45 nm SOI CMOS
-
May
-
A. Agah, J. Jayamon, P. Asbeck, L. Larson, and J. Buckwalter, "Multidrive stacked-FET power amplifiers at 90 GHz in 45 nm SOI CMOS," IEEE J. Solid-State Circuits, vol. 49, no. 5, pp. 1148-1157, May 2014.
-
(2014)
IEEE J. Solid-State Circuits
, vol.49
, Issue.5
, pp. 1148-1157
-
-
Agah, A.1
Jayamon, J.2
Asbeck, P.3
Larson, L.4
Buckwalter, J.5
-
5
-
-
84887297442
-
A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI CMOS
-
Jan.
-
J. Jayamon, A. Agah, B. Hanafi, H. Dabag, J. Buckwalter, and P. Asbeck, "A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI CMOS," in IEEE Amplifiers Wireless Radio Appl. Top. Conf., Jan. 2013, pp. 85-87.
-
(2013)
IEEE Amplifiers Wireless Radio Appl. Top. Conf.
, pp. 85-87
-
-
Jayamon, J.1
Agah, A.2
Hanafi, B.3
Dabag, H.4
Buckwalter, J.5
Asbeck, P.6
-
6
-
-
84865457696
-
A wideband, dual-path, millimeter-wave power amplifier with 20 dBm output power and PAE above 15% in 130 nm SiGe-BiCMOS
-
Sep.
-
Y. Zhao and J. Long, "A wideband, dual-path, millimeter-wave power amplifier with 20 dBm output power and PAE above 15% in 130 nm SiGe-BiCMOS," IEEE J. Solid-State Circuits, vol. 47, no. 9, pp. 1981-1997, Sep. 2012.
-
(2012)
IEEE J. Solid-State Circuits
, vol.47
, Issue.9
, pp. 1981-1997
-
-
Zhao, Y.1
Long, J.2
-
7
-
-
34248164467
-
A 23-dBm 60-GHz distributed active transformer in a silicon process technology
-
May
-
U. Pfeiffer and D. Goren, "A 23-dBm 60-GHz distributed active transformer in a silicon process technology," IEEE Trans. Microw. Theory Techn., vol. 55, no. 5, pp. 857-865, May 2007.
-
(2007)
IEEE Trans. Microw. Theory Techn.
, vol.55
, Issue.5
, pp. 857-865
-
-
Pfeiffer, U.1
Goren, D.2
-
8
-
-
84876588586
-
A 0.7 W fully integrated 42 GHz power amplifier with 10% PAE in 0.13 m SiGe BiCMOS
-
Feb.
-
W. Tai, L. Carley, and D. Ricketts, "A 0.7 W fully integrated 42 GHz power amplifier with 10% PAE in 0.13 m SiGe BiCMOS," in Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2013, pp. 142-143.
-
(2013)
Int. Solid-State Circuits Conf. Tech. Dig.
, pp. 142-143
-
-
Tai, W.1
Carley, L.2
Ricketts, D.3
-
9
-
-
84898079244
-
A 0.9 v 20.9 dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40 nm CMOS
-
Feb.
-
D. Zhao and P. Reynaert, "A 0.9 V 20.9 dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40 nm CMOS," in Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2014, pp. 248-249.
-
(2014)
Int. Solid-State Circuits Conf. Tech. Dig.
, pp. 248-249
-
-
Zhao, D.1
Reynaert, P.2
-
11
-
-
48849106471
-
A wideband W-band receiver front-end in 65-nm CMOS
-
Aug.
-
M. Khanpour, K. Tang, P. Garcia, and S. Voinigescu, "A wideband W-band receiver front-end in 65-nm CMOS," IEEE J. Solid-State Circuits, vol. 43, no. 8, pp. 1717-1730, Aug. 2008.
-
(2008)
IEEE J. Solid-State Circuits
, vol.43
, Issue.8
, pp. 1717-1730
-
-
Khanpour, M.1
Tang, K.2
Garcia, P.3
Voinigescu, S.4
-
12
-
-
79551527989
-
A W-band CMOS receiver chipset formillimeter-wave radiometer systems
-
Feb.
-
L. Zhou, C.-C. Wang, Z. Chen, and P. Heydari, "A W-band CMOS receiver chipset formillimeter-wave radiometer systems," IEEE J. Solid-State Circuits, vol. 46, no. 2, pp. 378-391, Feb. 2011.
-
(2011)
IEEE J. Solid-State Circuits
, vol.46
, Issue.2
, pp. 378-391
-
-
Zhou, L.1
Wang, C.-C.2
Chen, Z.3
Heydari, P.4
-
13
-
-
77649151751
-
A 58-65 GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply
-
Mar.
-
W. L. Chan and J. R. Long, "A 58-65 GHz neutralized CMOS power amplifier with PAE above 10% at 1-V supply," IEEE J. Solid-State Circuits, vol. 45, no. 3, pp. 554-564, Mar. 2010.
-
(2010)
IEEE J. Solid-State Circuits
, vol.45
, Issue.3
, pp. 554-564
-
-
Chan, W.L.1
Long, J.R.2
-
14
-
-
84884702793
-
A 60-GHz dual-mode class AB power amplifier in 40-nm CMOS
-
Oct.
-
D. Zhao and P. Reynaert, "A 60-GHz dual-mode class AB power amplifier in 40-nm CMOS," IEEE J. Solid-State Circuits, vol. 48, no. 10, pp. 2323-2337, Oct. 2013.
-
(2013)
IEEE J. Solid-State Circuits
, vol.48
, Issue.10
, pp. 2323-2337
-
-
Zhao, D.1
Reynaert, P.2
-
15
-
-
84876013212
-
An 83-GHz highgain SiGe BiCMOS power amplifier using transmission-line currentcombining technique
-
Apr.
-
A. Y.-K. Chen, Y. Baeyens, Y.-K. Chen, and J. Lin, "An 83-GHz highgain SiGe BiCMOS power amplifier using transmission-line currentcombining technique," IEEE Trans. Microw. Theory Techn., vol. 61, no. 4, pp. 1557-1569, Apr. 2013.
-
(2013)
IEEE Trans. Microw. Theory Techn.
, vol.61
, Issue.4
, pp. 1557-1569
-
-
Chen, A.Y.-K.1
Baeyens, Y.2
Chen, Y.-K.3
Lin, J.4
-
16
-
-
0008851540
-
Distributed active transformer-A new power-combining and impedance-transformation technique
-
Jan.
-
I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, "Distributed active transformer-A new power-combining and impedance-transformation technique," IEEE Trans. Microw. Theory Techn., vol. 50, no. 1, pp. 316-331, Jan. 2002.
-
(2002)
IEEE Trans. Microw. Theory Techn.
, vol.50
, Issue.1
, pp. 316-331
-
-
Aoki, I.1
Kee, S.D.2
Rutledge, D.B.3
Hajimiri, A.4
-
17
-
-
42649109036
-
Power-combining transformer techniques for fully-integrated CMOS power amplifiers
-
May
-
K. H. An, O. Lee, H. Kim, D. H. Lee, J. Han, K. S. Yang, Y. Kim, J. J. Chang, W.Woo, C.-H. Lee, H. Kim, and J. Laskar, "Power-combining transformer techniques for fully-integrated CMOS power amplifiers," IEEE J. Solid-State Circuits, vol. 43, no. 5, pp. 1064-1075, May 2008.
-
(2008)
IEEE J. Solid-State Circuits
, vol.43
, Issue.5
, pp. 1064-1075
-
-
An, K.H.1
Lee, O.2
Kim, H.3
Lee, D.H.4
Han, J.5
Yang, K.S.6
Kim, Y.7
Chang, J.J.8
Woo, W.9
Lee, C.-H.10
Kim, H.11
Laskar, J.12
-
18
-
-
84862819747
-
A fully-integrated high-power linear CMOS power amplifier with a parallel-series combining transformer
-
Mar.
-
J. Kim, W. Kim, H. Jeon, Y.-Y. Huang, Y. Yoon, H. Kim, C.-H. Lee, and K. T. Kornegay, "A fully-integrated high-power linear CMOS power amplifier with a parallel-series combining transformer," IEEE J. Solid-State Circuits, vol. 47, no. 3, pp. 599-614, Mar. 2012.
-
(2012)
IEEE J. Solid-State Circuits
, vol.47
, Issue.3
, pp. 599-614
-
-
Kim, J.1
Kim, W.2
Jeon, H.3
Huang, Y.-Y.4
Yoon, Y.5
Kim, H.6
Lee, C.-H.7
Kornegay, K.T.8
-
19
-
-
60749099343
-
Design of millimeter-wave CMOS radios: A tutorial
-
Jan.
-
B. Razavi, "Design of millimeter-wave CMOS radios: A tutorial," IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 56, no. 1, pp. 4-16, Jan. 2009.
-
(2009)
IEEE Trans. Circuits Syst. I, Reg. Papers
, vol.56
, Issue.1
, pp. 4-16
-
-
Razavi, B.1
-
21
-
-
84905040437
-
E-band transformer-based doherty power amplifier in 40 nm CMOS
-
Jun.
-
E. Kaymaksut, D. Zhao, and P. Reynaert, "E-band transformer-based doherty power amplifier in 40 nm CMOS," in Proc. RFIC, Jun. 2014, pp. 167-170.
-
(2014)
Proc. RFIC
, pp. 167-170
-
-
Kaymaksut, E.1
Zhao, D.2
Reynaert, P.3
-
22
-
-
84860690254
-
A 1 v 19.3 DBm 79 GHz Power Amplifier in 65 Nm Cmos
-
Feb.
-
K.-Y. Wang, T.-Y. Chang, and C.-K. Wang, "A 1 v 19.3 dBm 79 GHz power amplifier in 65 nm cmos," in Int. Solid-State Circuits Conf. Tech. Dig., Feb. 2012, pp. 260-262.
-
(2012)
Int. Solid-State Circuits Conf. Tech. Dig.
, pp. 260-262
-
-
Wang, K.-Y.1
Chang, T.-Y.2
Wang, C.-K.3
-
23
-
-
84893263389
-
A 90-GHz power amplifier with 18-dBm output power and 26 GHz 3-db bandwidth in standard RF 65-nm CMOS technology
-
Jun.
-
Z.-M. Tsai, Y.-H. Hsiao, H.-C. Liao, and H. Wang, "A 90-GHz power amplifier with 18-dBm output power and 26 GHz 3-db bandwidth in standard RF 65-nm CMOS technology," in IEEE MTT-S Int. Microw. Symp. Dig., Jun. 2013.
-
(2013)
IEEE MTT-S Int. Microw. Symp. Dig.
-
-
Tsai, Z.-M.1
Hsiao, Y.-H.2
Liao, H.-C.3
Wang, H.4
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