Multi-drive stacked-FET power amplifiers at 90 GHz in 45 nm SOI CMOS

IEEE Journal of Solid-State Circuits

Volumn 49, Issue 5, 2014, Pages 1148-1157

  Agah, Amir ^a,b   Jayamon, Jefy Alex ^a   Asbeck, Peter M ^a   Larson, Lawrence E ^a,c   Buckwalter, James F ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b QUALCOMM INC   (United States)

^c Brown University   (United States)

Author keywords

CMOS SOI; millimeter wave; multi drive; power added efficiency; power amplifier; stacked FET PA; W band

Indexed keywords

EFFICIENCY; MILLIMETER WAVES;

GATE RESISTANCE; MULTI-DRIVE; OUTPUT POWER; OUTPUT POWER AND EFFICIENCIES; POWER SUPPLY; POWER-ADDED EFFICIENCY; SOI CMOS; W-BAND;

POWER AMPLIFIERS;

EID: 84899993822     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2014.2308292     Document Type: Article

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