A Wideband, dual-path, millimeter-wave power amplifier with 20 dBm output power and PAE above 15% in 130 nm SiGe-BiCMOS

IEEE Journal of Solid-State Circuits

Volumn 47, Issue 9, 2012, Pages 1981-1997

  Zhao, Yi ^a   Long, John R ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Current summing; frequency scalability; millimeter wave; monolithic transformer; multi path amplifier; neutralization; parasitic compensation; power amplifier; power combiner; power splitter; self shielding; SiGe BiCMOS; wideband

Indexed keywords

CURRENT-SUMMING; MONOLITHIC TRANSFORMERS; NEUTRALIZATION; POWER COMBINER; POWER SPLITTERS; SELF-SHIELDING; SIGE-BICMOS; WIDE-BAND;

BROADBAND AMPLIFIERS; HETEROJUNCTION BIPOLAR TRANSISTORS; MILLIMETER WAVES; POWER AMPLIFIERS; SCALABILITY; SEMICONDUCTING SILICON; SILICON ALLOYS;

POWER TRANSFORMERS;

EID: 84865457696     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2012.2201275     Document Type: Article

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