A W-band stacked FET power amplifier with 17 dBm Psat in 45-nm SOI CMOS

BioWireleSS 2013 - Proceedings: 2013 IEEE Topical Conference on Biomedical Wireless Technologies, Networks, and Sensing Systems - 2013 IEEE Radio and Wireless Week, RWW 2013

Volumn , Issue , 2013, Pages 79-81

  Jayamon, Jefy ^a   Agah, Amir ^a   Hanafi, Bassel ^a   Dabag, Hayg ^a   Buckwalter, James ^a   Asbeck, Peter ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

CMOS SOI; millimeter wave; Power amplifier; stacked FET; W band

Indexed keywords

SENSORS; WIRELESS TELECOMMUNICATION SYSTEMS;

3 DB BANDWIDTH; FREQUENCY REGIMES; SATURATED OUTPUT POWER; SERIES-CONNECTED; STACKED FET; SUPPLY VOLTAGES; VOLTAGE HANDLING; W-BAND;

POWER AMPLIFIERS;

EID: 84887297442     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BioWireleSS.2013.6613681     Document Type: Conference Paper

References (8)

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