A 0.7W fully integrated 42GHz power amplifier with 10% PAE in 0.13μm SiGe BiCMOS

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 56, Issue , 2013, Pages 142-143

  Tai, Wei ^a   Carley, L Richard ^a   Ricketts, David S ^b  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FULLY INTEGRATED; FULLY-INTEGRATED POWER AMPLIFIERS; MILLIMETER-WAVE (MM-WAVE); OUTPUT POWER; POWER-ADDED EFFICIENCY; SIGE BICMOS; SILICON PROCESS; SILICON-BASED;

MICROPROCESSOR CHIPS; MILLIMETER WAVES; POWER AMPLIFIERS; SILICON;

SEMICONDUCTING SILICON;

EID: 84876588586     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2013.6487673     Document Type: Conference Paper

References (7)

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