A 60-GHz dual-mode class ab power amplifier in 40-nm CMOS

IEEE Journal of Solid-State Circuits

Volumn 48, Issue 10, 2013, Pages 2323-2337

  Zhao, Dixian ^a   Reynaert, Patrick ^a  

^a Katholieke Universiteit Leuven   (Belgium)

Author keywords

60 GHz; AM PM distortion; Class AB; CMOS; device parasitics; hot carrier injection; impedance matching; linearity; load pull; millimeter wave; Power amplifier; power combining; power added efficiency (PAE); reliability; transformer; two tone test

Indexed keywords

60 GHZ; CLASS-AB; HOT CARRIER INJECTION; LINEARITY; LOAD PULL; PARASITICS; POWER COMBINING; POWER-ADDED EFFICIENCY; TRANSFORMER; TWO-TONE TESTS;

CMOS INTEGRATED CIRCUITS; EFFICIENCY; ELECTRIC TRANSFORMER TESTING; HETEROJUNCTION BIPOLAR TRANSISTORS; IMPEDANCE MATCHING (ELECTRIC); MILLIMETER WAVES; RELIABILITY;

POWER AMPLIFIERS;

EID: 84884702793     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2013.2275662     Document Type: Article

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