Simulation of phosphorene field-effect transistor at the scaling limit

IEEE Transactions on Electron Devices

Volumn 62, Issue 2, 2015, Pages 659-665

  Cao, Xi ^a   Guo, Jing ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Anisotropic bands; MOSFETs; Phosphorene; Scaling limit; Transport crystalline direction

Indexed keywords

ANISOTROPY; BAND STRUCTURE; CRYSTALLINE MATERIALS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; SCHOTTKY BARRIER DIODES; TRANSISTORS;

ANISOTROPIC BANDS; CRYSTALLINE DIRECTIONS; MOSFETS; PHOSPHORENE; SCALING LIMITS;

MOSFET DEVICES;

EID: 85027922071     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2377632     Document Type: Article

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