-
1
-
-
0038573209
-
The electrical properties of black phosphorus
-
R. W. Keyes, " The electrical properties of black phosphorus," Phys. Rev. 92, 580 (1953). 10.1103/PhysRev.92.580
-
(1953)
Phys. Rev.
, vol.92
, pp. 580
-
-
Keyes, R.W.1
-
2
-
-
36849127417
-
Electrical and optical properties of crystalline black phosphorus
-
D. Warschauer, " Electrical and optical properties of crystalline black phosphorus," J. Appl. Phys. 34, 1853 (1963). 10.1063/1.1729699
-
(1963)
J. Appl. Phys.
, vol.34
, pp. 1853
-
-
Warschauer, D.1
-
3
-
-
0019010305
-
Synthesis and some properties of black phosphorus single crystals
-
Y. Maruyama, S. Suzuki, K. Kobayashi, and S. Tanuma, " Synthesis and some properties of black phosphorus single crystals," Physica B and C 105, 99 (1981). 10.1016/0378-4363(81)90223-0
-
(1981)
Physica B and C
, vol.105
, pp. 99
-
-
Maruyama, Y.1
Suzuki, S.2
Kobayashi, K.3
Tanuma, S.4
-
4
-
-
84908255731
-
Extraordinary photoluminescence and strong temperature/angle-dependent raman responses in few-layer phosphorene
-
S. Zhang, J. Yang, R. Xu, F. Wang, W. Li, M. Ghufran, Y. Zhang, Z. Yu, G. Zhang, and Q. Qin, " Extraordinary photoluminescence and strong temperature/angle-dependent raman responses in few-layer phosphorene," ACS Nano 8, 9590 (2014). 10.1021/nn503893j
-
(2014)
ACS Nano
, vol.8
, pp. 9590
-
-
Zhang, S.1
Yang, J.2
Xu, R.3
Wang, F.4
Li, W.5
Ghufran, M.6
Zhang, Y.7
Yu, Z.8
Zhang, G.9
Qin, Q.10
-
5
-
-
84901193930
-
Black phosphorus field-effect transistors
-
L. Li, Y. Yu, G. J. Ye, Q. Ge, X. Ou, H. Wu, D. Feng, X. H. Chen, and Y. Zhang, " Black phosphorus field-effect transistors," Nat. Nanotechnol. 9, 372 (2014). 10.1038/nnano.2014.35
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 372
-
-
Li, L.1
Yu, Y.2
Ye, G.J.3
Ge, Q.4
Ou, X.5
Wu, H.6
Feng, D.7
Chen, X.H.8
Zhang, Y.9
-
6
-
-
84898060562
-
Phosphorene: An unexplored 2D semiconductor with a high hole mobility
-
H. Liu, A. T. Neal, Z. Zhu, Z. Luo, X. Xu, D. Tománek, and P. D. Ye, " Phosphorene: An unexplored 2D semiconductor with a high hole mobility," ACS Nano 8, 4033 (2014). 10.1021/nn501226z
-
(2014)
ACS Nano
, vol.8
, pp. 4033
-
-
Liu, H.1
Neal, A.T.2
Zhu, Z.3
Luo, Z.4
Xu, X.5
Tománek, D.6
Ye, P.D.7
-
7
-
-
84904707277
-
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
-
F. Xia, H. Wang, and Y. Jia, " Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics," Nat. Commun. 5, 4458 (2014). 10.1038/ncomms5458
-
(2014)
Nat. Commun.
, vol.5
, pp. 4458
-
-
Xia, F.1
Wang, H.2
Jia, Y.3
-
8
-
-
84896300940
-
Electric field effect in ultrathin black phosphorus
-
S. P. Koenig, R. A. Doganov, H. Schmidt, A. H. Castro Neto, and B. Özyilmaz, " Electric field effect in ultrathin black phosphorus," Appl. Phys. Lett. 104, 103106 (2014). 10.1063/1.4868132
-
(2014)
Appl. Phys. Lett.
, vol.104
, pp. 103106
-
-
Koenig, S.P.1
Doganov, R.A.2
Schmidt, H.3
Neto, A.H.C.4
Özyilmaz, B.5
-
10
-
-
84904616293
-
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
-
J. Qiao, X. Kong, Z. Hu, F. Yang, and W. Ji, " High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus," Nat. Commun. 5, 4475 (2014). 10.1038/ncomms5475
-
(2014)
Nat. Commun.
, vol.5
, pp. 4475
-
-
Qiao, J.1
Kong, X.2
Hu, Z.3
Yang, F.4
Ji, W.5
-
11
-
-
84906835113
-
Performance limits projection of black phosphorous field-effect transistors
-
K. T. Lam, Z. Dong, and J. Guo, " Performance limits projection of black phosphorous field-effect transistors," IEEE Electron Device Lett. 35, 963 (2014). 10.1109/LED.2014.2333368
-
(2014)
IEEE Electron Device Lett.
, vol.35
, pp. 963
-
-
Lam, K.T.1
Dong, Z.2
Guo, J.3
-
13
-
-
84903576344
-
The effect of dielectric capping on few-layer phosphorene transistors: Tuning the schottky barrier heights
-
L. Han, A. T. Neal, S. Mengwei, D. Yuchen, and P. D. Ye, " The effect of dielectric capping on few-layer phosphorene transistors: tuning the schottky barrier heights," IEEE Electron Device Lett. 35, 795 (2014). 10.1109/LED.2014.2323951
-
(2014)
IEEE Electron Device Lett.
, vol.35
, pp. 795
-
-
Han, L.1
Neal, A.T.2
Mengwei, S.3
Yuchen, D.4
Ye, P.D.5
-
14
-
-
84899721921
-
Strain-induced gap modification in black phosphorus
-
A. S. Rodin, A. Carvalho, and A. H. Castro Neto, " Strain-induced gap modification in black phosphorus," Phys. Rev. Lett. 112, 176801 (2014). 10.1103/PhysRevLett.112.176801
-
(2014)
Phys. Rev. Lett.
, vol.112
, pp. 176801
-
-
Rodin, A.S.1
Carvalho, A.2
Neto, A.H.C.3
-
15
-
-
84908242519
-
Plasmons and screening in monolayer and multilayer black phosphorus
-
T. Low, R. Roldán, W. Han, F. Xia, P. Avouris, L. M. Moreno, and F. Guinea, " Plasmons and screening in monolayer and multilayer black phosphorus," Phys. Rev. Lett. 113, 106802 (2014). 10.1103/PhysRevLett.113.106802
-
(2014)
Phys. Rev. Lett.
, vol.113
, pp. 106802
-
-
Low, T.1
Roldán, R.2
Han, W.3
Xia, F.4
Avouris, P.5
Moreno, L.M.6
Guinea, F.7
-
16
-
-
0036867952
-
A computational study of thin-body, double-gate Schottky barrier MOSFETs
-
J. Guo and M. Lundstrom, " A computational study of thin-body, double-gate Schottky barrier MOSFETs," IEEE Trans. Electron Devices 49, 1897 (2002). 10.1109/TED.2002.804696
-
(2002)
IEEE Trans. Electron Devices
, vol.49
, pp. 1897
-
-
Guo, J.1
Lundstrom, M.2
-
17
-
-
20444441501
-
Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers
-
A. Rahman, M. S. Lundstrom, and A. W. Ghosh, " Generalized effective-mass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrarily oriented wafers," J. Appl. Phys. 97, 053702 (2005). 10.1063/1.1845586
-
(2005)
J. Appl. Phys.
, vol.97
, pp. 053702
-
-
Rahman, A.1
Lundstrom, M.S.2
Ghosh, A.W.3
-
18
-
-
18644369368
-
Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches
-
R. Venugopal, Z. Ren, S. Datta, M. S. Lundstrom, and D. Jovanovic, " Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches," J. Appl. Phys. 92, 3730 (2002). 10.1063/1.1503165
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 3730
-
-
Venugopal, R.1
Ren, Z.2
Datta, S.3
Lundstrom, M.S.4
Jovanovic, D.5
-
19
-
-
51649112866
-
Modeling of nanoscale devices
-
M. P. Anantram, M. S. Lundstrom, and D. E. Nikonov, " Modeling of nanoscale devices," Proc. IEEE 96, 1511 (2008). 10.1109/JPROC.2008.927355
-
(2008)
Proc. IEEE
, vol.96
, pp. 1511
-
-
Anantram, M.P.1
Lundstrom, M.S.2
Nikonov, D.E.3
-
20
-
-
0442311241
-
A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors
-
J. Guo, S. Datta, and M. Lundstrom, " A numerical study of scaling issues for Schottky-barrier carbon nanotube transistors," IEEE Trans. Electron Devices 51, 172 (2004). 10.1109/TED.2003.821883
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, pp. 172
-
-
Guo, J.1
Datta, S.2
Lundstrom, M.3
-
21
-
-
84900478786
-
Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus
-
R. Fei and L. Yang, " Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus," Nano Lett. 14, 2884 (2014). 10.1021/nl500935z
-
(2014)
Nano Lett.
, vol.14
, pp. 2884
-
-
Fei, R.1
Yang, L.2
|