TiS3 Transistors with Tailored Morphology and Electrical Properties

Advanced Materials

Volumn 27, Issue 16, 2015, Pages 2595-2601

  Island, Joshua O ^a   Barawi, Mariam ^b   Biele, Robert ^c   Almazán, Adrián ^b   Clamagirand, José M ^b   Ares, José R ^b   Sánchez, Carlos ^b,d   van der Zant, Herre S J ^a   Álvarez, José V ^b,d,e   D'Agosta, Roberto ^c,f   Ferrer, Isabel J ^b,d   Castellanos Gomez, Andres ^a,g  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^c UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^d INSTITUTO NICOLÁS CABRERA   (Spain)

^e Ciudad Universitaria de Cantoblanco   (Spain)

^f BASQUE FOUNDATION FOR SCIENCE   (Spain)

^g INSTITUTO MADRILEÑO DE ESTUDIOS AVANZADOS EN NANOCIENCIA IMDEA NANOCIENCIA   (Spain)

Author keywords

density functional theory; exfoliation potential; field effect transistors; mechanical exfoliation; monolayers; morphology; sulphur vacancy; TiS3

Indexed keywords

ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; MONOLAYERS; MORPHOLOGY; NANOSHEETS; SULFUR; VACANCIES;

EXFOLIATION POTENTIAL; MECHANICAL EXFOLIATION; N-TYPE DOPING; SINGLE LAYER;

DENSITY FUNCTIONAL THEORY;

EID: 85027920534     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201405632     Document Type: Article

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