Morphology control of layer-structured gallium selenide nanowires

Nano Letters

Volumn 7, Issue 1, 2007, Pages 199-203

  Peng, Hailin ^a   Meister, Stefan ^a   Chan, Candace K ^b   Zhang, Xiao Feng ^c   Cui, Yi ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c Hitachi High Technologies America   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BATTERY ELECTRODES; CHALCOGENIDES; GROWTH TEMPERATURE; VAPOR-LIQUID-SOLID (VLS) GROWTH;

ANISOTROPY; CATALYSTS; ELECTRIC BATTERIES; MORPHOLOGY; PHOTOCATHODES; SEMICONDUCTING GALLIUM COMPOUNDS; SYNTHESIS (CHEMICAL);

NANOSTRUCTURED MATERIALS;

GALLIUM; GALLIUM SELENIDE; NANOWIRE; SELENIUM; UNCLASSIFIED DRUG;

ARTICLE; CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM; MICROSCOPY, ELECTRON, TRANSMISSION; NANOWIRES; SELENIUM;

EID: 33846864433     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl062047+     Document Type: Article

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