Annealing effects on the electrical properties of spin coated poly (3-hexylthiophene) (P3HT) thin films

Materials Science in Semiconductor Processing

Volumn 61, Issue , 2017, Pages 39-44

  Aruna, P ^a   Joseph, C M ^a  

^a DAYANANDA SAGAR COLLEGE OF ENGINEERING   (India)

Author keywords

Annealing; Bi stability; Organic memory; Organic semiconductors; P3HT; Thin films

Indexed keywords

ANNEALING; BIAS VOLTAGE; BUTYRIC ACID; SEMICONDUCTING ORGANIC COMPOUNDS; THRESHOLD VOLTAGE;

ANNEALING EFFECTS; EFFECT OF ANNEALING; MEMORY APPLICATIONS; METHYL ESTERS; ORGANIC MEMORY; P3HT; POLY(3-HEXYLTHIOPHENE-2 ,5-DIYL); POLY-3-HEXYLTHIOPHENE;

THIN FILMS;

EID: 85008599996     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2016.12.041     Document Type: Article

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