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Volumn 358, Issue 23, 2012, Pages 3299-3303

Switching and memory effects in partly crystallized amorphous Ge 2Sb 2Te 5 films in a current controlled mode

(9) Almasov, Nurlan c Bogoslovskiy, Nikita a Korobova, Nataly c Kozyukhin, Sergey b Fefelov, Sergey a Kazakova, Lyudmila a Jakovlev, Sergey a Tsendin, Konstantin a Guseinov, Nazim c

a IOFFE INSTITUTE (Russian Federation)

b KURNAKOV INSTITUTE OF GENERAL AND INORGANIC CHEMISTRY (Russian Federation)

c AL FARABI KAZAKH NATIONAL UNIVERSITY (Kazakhstan)

Author keywords

GST films; Phase change memory; Switching and memory effects

Indexed keywords

CRYSTALLINE NUCLEI; CURRENT FILAMENTS; INITIAL RESISTANCE; MEMORY EFFECTS; PHASE CHANGES; S SHAPE;

CURRENT VOLTAGE CHARACTERISTICS; GERMANIUM; PHASE CHANGE MEMORY; RAMAN SPECTROSCOPY; SWITCHING;

AMORPHOUS FILMS;

EID: 84869054132 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2012.09.008 Document Type: Article

Times cited : (20)

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