Study of aluminum and gold as the gate electrode material on silicon nitride based MIS devices

Applied Surface Science

Volumn 171, Issue 1-2, 2001, Pages 130-135

  Bose, Mohua ^a   Basa, D K ^a   Bose, D N ^b  

^a UTKAL UNIVERSITY   (India)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRODES; GLOW DISCHARGES; GOLD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING FILMS; SILICON NITRIDE; SUBSTRATES;

GATE ELECTRODES; GLOW DISCHARGE DEPOSITION;

MIS DEVICES;

EID: 0035254697     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00557-2     Document Type: Article

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