Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

Materials Chemistry and Physics

Volumn 142, Issue 2-3, 2013, Pages 626-632

  Zhang, Li ^a   Li, Ye ^a   Shi, Jun ^a   Shi, Gaoquan ^b   Cao, Shaokui ^a  

^a ZHENGZHOU UNIVERSITY   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

Coatings; Composite materials; Electrical properties; Galvanometry measurements; Thin films

Indexed keywords

AMBIENT CONDITIONS; CONDUCTION MECHANISM; CONSTANT VOLTAGE STRESS; ELECTRICAL SWITCHING; POLY-3-HEXYLTHIOPHENE; REWRITABLE MEMORY; SPIN-COATING METHOD; TURN-ON VOLTAGES;

CARRIER MOBILITY; COATINGS; COMPOSITE FILMS; COMPOSITE MATERIALS; NANOCOMPOSITES; SWITCHING; THIN FILMS;

ELECTRIC PROPERTIES;

EID: 84884591221     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2013.08.007     Document Type: Article

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