The realization of half-metal and spin-semiconductor for metal adatoms on arsenene

Applied Surface Science

Volumn 390, Issue , 2016, Pages 60-67

  Li, Geng ^a,b   Zhao, Yinchang ^a,b   Zeng, Shuming ^a,b   Ni, Jun ^a,b  

^a TSINGHUA UNIVERSITY   (China)

^b The Collaborative Innovation Center of Quantum Matter   (China)

Author keywords

Adsorption; Arsenene; First principles; Half metal; Spin semiconductor

Indexed keywords

ADATOMS; ADSORPTION; BINDING ENERGY; CALCULATIONS; ELECTRONIC PROPERTIES; MAGNETIC MOMENTS; MAGNETIC SEMICONDUCTORS; NARROW BAND GAP SEMICONDUCTORS;

ADSORPTION ENERGIES; ARSENENE; COHESIVE ENERGIES; FIRST PRINCIPLES; FIRST-PRINCIPLES CALCULATION; FUNCTIONALIZATIONS; HALF METALS; SEMICONDUCTING BEHAVIOR;

METALS;

EID: 84983470135     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2016.08.016     Document Type: Article

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