Atomically thin arsenene and antimonene: Semimetal-semiconductor and indirect-direct band-gap transitions

Angewandte Chemie - International Edition

Volumn 54, Issue 10, 2015, Pages 3112-3115

  Zhang, Shengli ^a   Yan, Zhong ^a   Li, Yafei ^b   Chen, Zhongfang ^c   Zeng, Haibo ^a  

^a NANJING UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b NANJING NORMAL UNIVERSITY   (China)

^c UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

Antimony; Arsenic; Density functional calculations; Electronic properties; Semiconductors

Indexed keywords

ANTIMONY; ARSENIC; CALCULATIONS; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; METALLOIDS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR MATERIALS;

BIAXIAL STRAINS; DIRECT BAND GAP; DIRECT BAND GAP SEMICONDUCTORS; ELEMENTAL SEMICONDUCTORS; FIRST-PRINCIPLES CALCULATION; INDIRECT SEMICONDUCTOR; MECHANICAL SENSORS; TWO DIMENSIONAL (2 D);

ENERGY GAP;

ANTIMONY; METAL; ORGANOARSENIC DERIVATIVE;

CHEMISTRY; SEMICONDUCTOR;

ANTIMONY; ARSENICALS; METALS; SEMICONDUCTORS;

EID: 84923379311     PISSN: 14337851     EISSN: 15213773     Source Type: Journal    
DOI: 10.1002/anie.201411246     Document Type: Article

References (33)

1. S. Das Sarma, S. Adam, E. H. Hwang, E. Rossi, Rev. Mod. Phys. 2011, 83, 407.
2. Y. Pan, L. Z. Zhang, L. Huang, L. F. Li, L. Meng, M. Gao, Q. Huan, X. Lin, Y. L. Wang, S. X. Du, H. Freund, H. J. Gao, Small 2014, 10, 2215.
3. a) Y. Zhang, T. T. Tang, C. Girit, Z. Hao, M. C. Martin, A. Zettl, M. F. Crommie, Y. R. Shen, F. Wang, Nature 2009, 459, 820;
4. b) X. Li, X. Wang, L. Zhang, S. Lee, H. Dai, Science 2008, 319, 1229;
5. c) Q. Tang, J. Bao, Y. F. Li, Z. Zhou, Z. F. Chen, Nanoscale 2014, 6, 8624;
6. d) Y. Jing, Z. Zhou, C. R. Cabrera, Z. F. Chen, J. Mater. Chem. A 2014, 2, 12104.
7. a) L. K. Li, Y. J. Yu, G. J. Ye, Q. Q. Ge, X. D. Ou, H. Wu, D. L. Feng, X. H. Chen, Y. B. Zhang, Nat. Nanotechnol. 2014, 9, 372;
8. b) X. D. Zhang, Y. Xie, Chem. Soc. Rev. 2013, 42, 8187.
9. a) X. F. Song, H. B. Zeng, J. Mater. Chem. C 2013, 1, 2952;
10. b) Q. Tang, Z. Zhou, Prog. Mater. Sci. 2013, 58, 1244;
11. c) H. B. Zeng, C. Y. Zhi, Z. H. Zhang, X. L. Wei, X. B. Wang, W. L. Guo, Y. Bando, D. Golberg, Nano Lett. 2010, 10, 5049.
12. N. C. Norman, Chemistry of Arsenic, Antimony and Bismuth, Academic Press, Springer, 1998.
13. Y. F. Li, Y. L. Liao, Z. F. Chen, Angew. Chem. Int. Ed. 2014, 53, 7248;
14. Angew. Chem. 2014, 126, 7376.
15. S. Cahangirov, M. Topsakal, E. Aktük, H. Sahin, S. Ciraci, Phys. Rev. Lett. 2009, 102, 236804.
16. R. Zacharia, H. Ulbricht, T. Hertel, Phys. Rev. B 2004, 69, 155406.
17. a) L. Chen, Y. Hernandez, X. L. Feng, K. Müllen, Angew. Chem. Int. Ed. 2012, 51, 7640;
18. Angew. Chem. 2012, 124, 7758;
19. b) C. N. R. Rao, A. K. Sood, K. S. Subrahmanyam, A. Govindaraj, Angew. Chem. Int. Ed. 2009, 48, 7752;
20. Angew. Chem. 2009, 121, 7890.
21. a) R. G. Pearson, Proc. Natl. Acad. Sci. USA 1975, 72, 2104;
22. b) T. Hughbanks, R. Hoffmann, J. Am. Chem. Soc. 1983, 105, 3528.
23. P. Vogt, P. De Padova, C. Quaresima, J. Avila, E. Frantzeskakis, M. C. Asensio, A. Resta, B. Ealet, G. Le Lay, Phys. Rev. Lett. 2012, 108, 155501.
24. a) J. Feng, X. F. Qian, C.W. Huang, J. Li, Nat. Photonics 2012, 6, 865;
25. b) K. He, C. Poole, K. F. Mak, J. Shan, Nano Lett. 2013, 13, 2931;
26. c) P. Miró, M. Ghorbani-Asl, T. Heine, Angew. Chem. Int. Ed. 2014, 53, 3015;
27. Angew. Chem. 2014, 126, 3059.
28. H. Shi, H. Pan, Y.-W. Zhang, B. I. Yakobson, Phys. Rev. B 2013, 87, 155304.
29. J. S. Qiao, X. H. Kong, Z. X. Hu, F. Yang, W. Ji, Nat. Commun. 2014, 5, 4475.
30. M. D. Segall, P. J. D. Lindan, M. J. Probert, C. J. Pickard, P. J. Hasnip, S. J. Clark, M. C. Payne, J. Phys. Condens. Matter 2002, 14, 2717.
31. J. P. Perdew, K. Burke, M. Ernzerhof, Phys. Rev. Lett. 1996, 77, 3865.
32. S. Grimme, J. Comput. Chem. 2007, 27, 1787.
33. J. Heyd, G. E. Scuseria, M. Ernzerhof, J. Chem. Phys. 2006, 124, 219906.