Fabrication of a freestanding boron nitride single layer and Its defect assignments

Physical Review Letters

Volumn 102, Issue 19, 2009, Pages

  Jin, Chuanhong ^a,b   Lin, Fang ^c   Suenaga, Kazu ^a   Iijima, Sumio ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b MEIJO UNIVERSITY   (Japan)

^c SOUTH CHINA AGRICULTURAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC DEFECTS; HEXAGONAL BORON NITRIDE (H-BN); LAYER-BY-LAYER; MONOVACANCIES; SINGLE LAYER; SPUTTERING PROCESS; WAVE RECONSTRUCTION;

BORON; ELECTRON IRRADIATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NITRIDES;

BORON NITRIDE;

EID: 67650445626     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.195505     Document Type: Article

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