Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

Applied Physics Letters

Volumn 104, Issue 5, 2014, Pages

  Sharma, Vivek ^a   Tracy, Clarence ^a   Schroder, Dieter ^a   Herasimenka, Stanislau ^a   Dauksher, William ^a   Bowden, Stuart ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BIOLOGY; NITRIDES; OXIDE FILMS; PASSIVATION; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON NITRIDE; SILICON OXIDES; TEXTURES;

CZOCHRALSKI SILICON; HIGH QUALITY SURFACE; HIGH TEMPERATURE; LONG TERM STABILITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); SILICON NITRIDE FILM; SURFACE PASSIVATION; UNIFORM CHARGE DISTRIBUTION;

SILICON SOLAR CELLS;

EID: 84899884391     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4863829     Document Type: Article

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