Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy

ACS Nano

Volumn 10, Issue 7, 2016, Pages 7039-7046

  Samad, Leith ^a   Bladow, Sage M ^a   Ding, Qi ^a   Zhuo, Junqiao ^a   Jacobberger, Robert M ^b   Arnold, Michael S ^b   Jin, Song ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b University of Wisconsin Madison   (United States)

Author keywords

chemical vapor deposition; graphene; heterostructures; molybdenum disulfide; SnS2; TaS2; van der Waals epitaxy

Indexed keywords

DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; EPITAXIAL GROWTH; GRAPHENE; HETEROJUNCTIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HUMIDITY CONTROL; MOLYBDENUM COMPOUNDS; MONOLAYERS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; TEMPERATURE; TRANSITION METALS; VAN DER WAALS FORCES; VAPOR DEPOSITION; X RAY SPECTROSCOPY;

ELECTRONIC INTERACTIONS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION; MOLYBDENUM DISULFIDE; OPTOELECTRONIC APPLICATIONS; RAMAN AND PHOTOLUMINESCENCE SPECTROSCOPY; TRANSITION METAL DICHALCOGENIDES; VAN DER WAALS EPITAXY;

CHEMICAL VAPOR DEPOSITION;

EID: 84979900457     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.6b03112     Document Type: Article

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