Physical unbiased generation of random numbers with coupled resistive switching devices

IEEE Transactions on Electron Devices

Volumn 63, Issue 5, 2016, Pages 2029-2035

  Balatti, Simone ^a,b   Ambrogio, Stefano ^a   Carboni, Roberto ^a   Milo, Valerio ^a   Wang, Zhongqiang ^a   Calderoni, Alessandro ^c   Ramaswamy, Nirmal ^c   Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

^b Intermolecular Inc   (United States)

^c MICRON TECHNOLOGY INC   (United States)

Author keywords

Memory reliability; random number genera tion (RNG); resistive switching memory (RRAM).

Indexed keywords

CRYPTOGRAPHY; PROBABILITY; RRAM; STOCHASTIC SYSTEMS; SWITCHING;

MEMORY RELIABILITY; NON-VOLATILE MEMORY; PHYSICAL UNCLONABLE FUNCTIONS (PUF); RANDOM NUMBERS; RESISTIVE SWITCHING DEVICES; RESISTIVE SWITCHING MEMORY; STOCHASTIC BEHAVIOR; STOCHASTIC SWITCHING;

RANDOM NUMBER GENERATION;

EID: 84977992335     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2016.2537792     Document Type: Article

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