A novel true random number generator design leveraging emerging memristor technology

Proceedings of the ACM Great Lakes Symposium on VLSI, GLSVLSI

Volumn 20-22-May-2015, Issue , 2015, Pages 271-276

  Wang, Yandan ^a   Wen, Wei ^a   Hu, Miao ^b   Li, Hai ^a  

^a University of Pittsburgh   (United States)

^b HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

Memristor; Random number generator; Stochastic switching

Indexed keywords

FLIP FLOP CIRCUITS; MEMRISTORS; NUMBER THEORY; PASSIVE FILTERS; PROBABILITY DISTRIBUTIONS; STOCHASTIC SYSTEMS; SWITCHING;

LOW-POWER CONSUMPTION; MEMRISTOR; RANDOM BIT GENERATIONS; RANDOM NUMBER GENERATORS; STOCHASTIC BEHAVIOR; STOCHASTIC PROPERTIES; STOCHASTIC SWITCHING; SWITCHING PROBABILITY;

RANDOM NUMBER GENERATION;

EID: 84955479155     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1145/2742060.2742088     Document Type: Conference Paper

References (21)

1. T. L. Blackwell, "Applications of randomness in system performance measurement," Citeseer, 1998.
2. R. S. DeBellis, R. M. Smith Sr, and P. C.-C. Yeh, "Pseudo random number generator," US Patents US6061703, 2000.
3. S. Fujita, K. Uchida, S. Yasuda, R. Ohba, H. Nozaki, and T. Tanamoto, "Si nanodevices for random number generating circuits for cryptographic security," in 2004 IEEE International Solid-State Circuits Conference (ISSCC), 2004, pp. 294-295.
4. C.-Y. Huang, W. C. Shen, Y.-H. Tseng, Y.-C. King, and C.-J. Lin, "A contact-resistive random-access-memory-based true random number generator," IEEE Electron Device Letters, Vol. 33, pp. 1108-1110, 2012.
5. V. C. Vivoli, P. Sekatski, J. D. Bancal, C. C. W. Lim, A. Martin, R. T. Thew, et al., "Device-independent quantum random number generator with a photon pair source," arXiv preprint arXiv:1409.8051, 2014.
6. A. Fukushima, T. Seki, K. Yakushiji, H. Kubota, H. Imamura, S. Yuasa, et al, "Spin dice: A scalable truly random number generator based on spintronics," Applied Physics Express, Vol. 7, p. 083001, 2014.
7. Y. Yang and W. Lu, "Nanoscale resistive switching devices: mechanisms and modeling," Nanoscale, Vol. 5, pp. 10076-10092, 2013.
8. S. Gaba, P. Knag, Z. Zhang, and W. Lu, "Memristive devices for stochastic computing," in 2014 IEEE International Symposium on Circuits and Systems (ISCAS), 2014, pp. 2592-2595.
9. S. Kim, S. Choi, and W. Lu, "Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor," ACS nano, Vol. 8, pp. 2369-2376, 2014.
10. L. Chua, "Resistance switching memories are memristors," Applied Physics A, Vol. 102, pp. 765-783, 2011.
11. M. Hu, H. Li, Y. Chen, Q. Wu, G. Rose, and W. Linderman, "Memristor Crossbar Based Neuromorphic Computing System: A Case Study," IEEE Transactions on Neural Network and Learning System (TNNLS), Vol. 25, no 10, pp. 1864-1878, Oct. 2014.
12. A. F. Vincent, J. Larroque, W. S. Zhao, N. B. Romdhane, O. Bichler, C. Gamrat, et al, "Spin-transfer torque magnetic memory as a stochastic memristive synapse," in Circuits and Systems (ISCAS), 2014 IEEE International Symposium on, 2014, pp. 1074-1077.
13. S. Gaba, P. Sheridan, J. Zhou, S. Choi, and W. Lu, "Stochastic memristive devices for computing and neuromorphic applications," Nanoscale, Vol. 5, pp. 5872-5878, 2013.
14. 2-x bilayer structures," Nature materials, Vol. 10, pp. 625-630, 2011.
15. A. C. Torrezan, J. P. Strachan, G. Medeiros-Ribeiro, and R. S. Williams, "Sub-nanosecond switching of a tantalum oxide memristor," Nanotechnology, Vol. 22, p. 485203, 2011.
16. L. O. Chua, "Memristor-the missing circuit element," IEEE Transactions on Circuit Theory, Vol. 18, pp. 507-519, 1971.
17. R. Williams, "How we found the missing memristor," IEEE Spectrum, Vol. 45, no. 12, pp. 28-35, 2008.
18. M. Hu, Y. Wang, Q. Qiu, Y. Chen, and H. Li, "The stochastic modeling of TiO2 memristor and its usage in neuromorphic system design," in Asia and South Pacific Design Automation Conference (ASP-DAC), 2014, pp. 831-836.
19. S. Yu, B. Gao, Z. Fang, H. Yu, J. Kang, and H.-S. P. Wong, "Stochastic learning in oxide binary synaptic device for neuromorphic computing," Frontiers in neuroscience, Vol. 7, 2013.
20. G. Medeiros-Ribeiro, F. Perner, R. Carter, H. Abdalla, M. D. Pickett, and R. S. Williams, "Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution," Nanotechnology, Vol. 22, p. 095702, 2011.
21. W. Yi, et al, "Feedback write scheme for memristive switching devices," Appl. Phys. A, Vol. 102, pp. 973-982, 2011.