Cycling-induced degradation of metal-oxide resistive switching memory (RRAM)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2016-February, Issue , 2015, Pages 7.6.1-7.6.4

  Wang, Z Q ^a   Ambrogio, S ^a   Balatti, S ^a   Sills, S ^b   Calderoni, A ^b   Ramaswamy, N ^b   Ielmini, D ^a  

^a POLITECNICO DI MILANO   (Italy)

^b MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRON DEVICES; METALS; RRAM; SWITCHING SYSTEMS;

DEGRADATION KINETICS; DISTRIBUTED ENERGIES; EMBEDDED APPLICATION; HIGH-SPEED OPERATION; INDUCED DEGRADATION; LOW-RESISTANCE STATE; RESISTIVE SWITCHING MEMORY; STORAGE-CLASS MEMORY;

RANDOM ACCESS STORAGE;

EID: 84964066449     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2015.7409649     Document Type: Conference Paper

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