Optical and electrical characterization of crystalline silicon films formed by rapid thermal annealing of amorphous silicon

Thin Solid Films

Volumn 603, Issue , 2016, Pages 212-217

  Baldus Jeursen, Christopher ^a   Tarighat, Roohollah Samadzadeh ^a   Sivoththaman, Siva ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

Amorphous silicon; Rapid thermal annealing; Recrystallization; Solar cells

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; BUDGET CONTROL; CRYSTALLINE MATERIALS; CRYSTALLIZATION; DEFECT DENSITY; DEFECTS; DEPOSITION; DEPOSITION RATES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLIC FILMS; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SILICON; SILICON SOLAR CELLS; SINGLE CRYSTALS; SOLAR CELLS; SPECTROSCOPIC ELLIPSOMETRY; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

CRYSTALLINE SILICON FILMS; HIGH DEPOSITION RATES; HYDROGENATED AMORPHOUS SILICON (A-SI:H) FILMS; OPTICAL AND ELECTRICAL CHARACTERIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITIONS (PE CVD); RAPID THERMAL ANNEALING (RTA); SINGLE CRYSTAL SILICON; SPREADING RESISTANCE PROFILING;

SILICON WAFERS;

EID: 84977508013     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2016.01.025     Document Type: Article

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