Epitaxial Si/Si(001) thin films obtained by solid phase crystallization

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1188-1190

  Kim, H J ^a   Jeon, S H ^a   Jeon, T Y ^a   Noh, D Y ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE FILMS; EPITAXIAL LAYERS; GLASS SUBSTRATES; INTENSITY FRINGES;

CRYSTAL STRUCTURE; CRYSTALLIZATION; DEFECTS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOS CAPACITORS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SEMICONDUCTOR JUNCTIONS; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY SCATTERING;

THIN FILMS;

EID: 4344563385     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1763909     Document Type: Article

References (16)

1. M. K. Halalis and D. W. Greve, J. Appl. Phys. 63, 2260 (1988).
2. T. Noma, T. Yonehara, and H. Kumomi, Appl. Phys. Lett. B59, 653 (1991).
3. T. Sameshima, S. Usui, and M. Sekiya, IEEE Electron Device Lett. 7, 276 (1986).
4. H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuwahara, S. Ishida, T. Nohda, K. Sano, H. Iwata, M. Osumi, S. Tsuda, S. Nakano, and Y. Kuwano, Jpn. J. Appl. Phys., Part 1 B30, 3700 (1991).
5. K. H. Weiner, P. G. Carey, M. McCarthy, and T. W. Sigmon, IEEE Electron Device Lett. B13, 369 (1992).
6. J. R. Pfiester, R. D. Sivan, H. Ming Liaw, C. A. Seelbach, and C. D. Gunderson, IEEE Electron Device Lett. B11, 365 (1990).
7. J. J. Sun, R. F. Bartholomew, K. Bellur, A. Srivastava, C. M. Osburn, and N. A. Masnari, IEEE Electron Device Lett. B44, 1491 (1997).
8. S. Hasegawa, S. Sakamoto, T. Inokuma, and Y. Kurata, Appl. Phys. Lett. 62, 1218 (1993).
9. S. Hasegawa, S. Watanabe, T. Inokuma, and Y. Kurata, J. Appl. Phys. 77, 1938 (1995).
10. L. Haji and P. Joubert, J. Non-Cryst. Solids 219, 164 (1996).
11. M. Hary and S. Zukotynski, J. Vac. Sci. Technol. A 9, 496 (1991).
12. L. Csepregi, E. F. Kennedy, and J. W. Mayer, J. Appl. Phys. 49, 3906 (1978).
13. J. Narayan, J. Appl. Phys. 53, 8607 (1982).
14. S. K. Sinha, E. B. Sirota, and S. Garoff, Phys. Rev. B 38, 2297 (1988).
15. D. Y. Noh, Y. Hwu, H. K. Kim, and M. Hong, Phys. Rev. B 51, 4441 (1995).
16. C. Moss and J. F. Graczyk, Phys. Rev. Lett. 23, 1167 (1966).