Electrical and structural properties of poly-Si films grown by furnace and rapid thermal annealing of amorphous Si

Journal of Applied Physics

Volumn 84, Issue 4, 1998, Pages 1968-1972

  Girginoudi, S ^a   Girginoudi, D ^a   Thanailakis, A ^a   Georgoulas, N ^a   Papaioannou, V ^b  

^a DEMOCRITUS UNIVERSITY OF THRACE   (Greece)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000528759     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368352     Document Type: Article

References (17)

1. T. Sameshima, S. Usui, and M. Sekiya, IEEE Electron Device Lett. EDL-7, 276 (1986).
2. H. Kuriyama, S. Kiyama, S. Noguchi, T. Kuwahara, S. Ishida, T. Nohda, K. Sano, H. Iwata, H. Kawata, M. Osumi, S. Tsuda, S. Nakano, and Y. Kuwano, Jpn. J. Appl. Phys., Part 1 30, 3700 (1991).
3. T. Noma, T. Yonehara, and H. Kumoni, Appl. Phys. Lett. 59, 653 (1991).
4. M. K. Hatalis and D. W. Greve, J. Appl. Phys. 63, 2260 (1988).
5. A. Mimura, K. Konishi, K. Ono, J. Ohwada, Y. Hosokawa, Y. A. Ono, T. Suzuki, K. Miyata, and H. Kawakami, IEEE Trans. Electron Devices 36, 351 (1989).
6. L. Haji, P. Joubert, J. Stoemenos, and N. A. Economou, J. Appl. Phys. 75, 3944 (1994).
7. L. Plevert, L. Haji, M. Bonnel, N. Duhamel, and B. Loisel, in Proceedings of the 3rd International Conference on Polycrystalline Semiconductors-Physics and Technology, edited by H. P. Strunk, J. H. Werner, B. Fortin, and O. Bonnaud (Scitec, Aedermannsdort, Germany, 1994), Vols. 37-38, p. 547.
8. L. Plevert, thesis, University of Rennes I, France (1994).
9. R. Drosd and J. Washburn, J. Appl. Phys. 53, 397 (1982).
10. P. Legagneux, F. Petinot, O. Huct, E. Plais, C. Reita, D. Pribat, R. Carluccio, A. Pecora, L. Mariucci, and G. Fortunato, Proc. ESSDERC 96, Bologna, Italy 9-11 September, 1996, p. 1071.
11. J. S. Im, H. J. Kim, and M. O. Thompson, Appl. Phys. Lett. 63, 1969 (1993).
12. J. P. L. Maurice, Colloq. Phys. 51, C1-581 (1990).
13. S. Shirai and T. Serikawa, IEEE Trans. Electron Devices 39, 450 (1992).
14. H. Zhang, N. Kusumoto, T. Inushima, and S. Yamazaki, IEEE Electron Device Lett. 13, 297 (1992).
15. M. Bonnel, N. Duhamel, L. Haji, B. Loisel, and J. Stoemenos, IEEE Electron Device Lett. 14, 551 (1993).
16. D. Girginoudi, S. Girginoudi, A. Thanailakis, N. Georgoulas, J. Stoemenos, and J. Antonopoulos, Thin Solid Films 268, 1 (1995).
17. N. M. Johnson, D. K. Biegelsen, and M. D. Moyer, Appl. Phys. Lett. 40, 882 (1982).