TEM analysis of Si thin films prepared by diode laser induced solid phase epitaxy at high temperatures

Materials Letters

Volumn 122, Issue , 2014, Pages 37-40

  Schmidt, T ^a   Labar J L ^b   Falk, F ^a  

^a LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

^b INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

Author keywords

IR laser; Random nucleation and growth; Silicon; Solid phase epitaxy; TEM analysis; Time resolved reflectivity measurements

Indexed keywords

EID: 84894590188     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2014.02.006     Document Type: Article

References (23)

1. O Skibitzki, Y Yamamoto, MA Schubert, and B Tillack Solid-phase epitaxy of undoped amorphous silicon by in-situ postannealing Thin Solid Films 520 2012 3271 3275
2. 2 patterns and its application to silicon-on-insulator transistors Appl Phys Lett 49 1986 397 399
3. K Ishii, Y Hayashi, and T Sekigawa Experimental fabrication of XMOS transistors using lateral solid-phase epitaxy of CVD silicon films Japan J Appl Phys 29 1990 L521 L523
4. P Prathap, O Tuzun, D Madi, and A Slaoui Thin film silicon solar cells by AIC on foreign substrates Sol Energy Mater Sol Cells 95 2011 S44 S52
5. A Aberle Progress with polycrystalline silicon thin-film solar cells on glass at UNSW J Cryst Growth 287 2006 386 390
6. Andrä G, Bergmann J, Gawlik A, Plentz J, Höger I, Schmidt T, et al. Thin film solar cells based on diode laser crystallized polycrystalline silicon. In: proceedings of the 26th european photovoltaic solar energy conference and exhibition. 2011. p. 2803-2806.
7. I Hoeger, A Gawlik, G Andrä, and F Falk Thickening of thin laser crystallized silicon films by solid phase epitaxy for photovoltaic applications J Cryst Growth 364 2013 164 168
8. X Maeder, C Niederberger, S Christiansen, A Bochmann, G Andrä, and A Gawlik et al. Microstructure and lattice bending in polycrystalline laser-crystallized silicon thin films for photovoltaic applications Thin Solid Films 519 2010 58 63
9. NG Rudawski, KS Jones, S Morarka, ME Law, and RG Elliman Stressed multidirectional solid-phase epitaxial growth of Si J Appl Phys 105 2009 81101-1 81101-20
10. M Bauer, M Oehme, M Sauter, G Eifler, and E Kasper Time resolved reflectivity measurements of silicon solid phase epitaxial regrowth Thin Solid Films 364 2000 228 232
11. G Olson, and J Roth Kinetics of solid phase crystallization in amorphous silicon Mater Sci Rep 3 1988 1 78
12. O Tuezuen, A Slaoui, S Roques, A Focsa, F Jomard, and D Ballutaud Solid phase epitaxy on N-type polysilicon films formed by aluminium induced crystallization of amorphous silicon Thin Solid Films 517 2009 6358 6363
13. U Köster Crystallization of amorphous silicon films Phys Status Solidi A 48 1987 313 321
14. A Zotov, and V Korobtsov Present status of solid phase epitaxy of vacuum-deposited silicon J Cryst Growth 98 1989 519 530
15. L Csepregi, E Kennedy, J Mayer, and T Sigmon Substrate-orientation dependence of epitaxial regrowth rate from Si-implanted amorphous Si J Appl Phys 49 1978 3906 3911
16. W Kern The evolution of silicon wafer cleaning technology J Electrochem Soc 137 1990 1887 1892
17. T Schmidt, A Gawlik, H Schneidewind, A Ihring, G Andrä, and F Falk Experimental setup for investigating silicon solid phase crystallization at high temperatures Opt Express 21 2013 16296 16304
18. T Schmidt, I Hoeger, A Gawlik, G Andrä, and F Falk Solid phase epitaxy of silicon thin films by diode laser irradiation for photovoltaic applications Thin Solid Films 520 2012 7087 7092
19. J Bergmann, M Heusinger, G Andrä, and F Falk Temperature dependent optical properties of amorphous silicon for diode laser crystallization Opt Express 20 2012 A856 A863
20. Y Sun, X Zhang, and C Grigoropoulos Spectral optical functions of silicon in the range of 1.13-4.96 eV at elevated temperatures Int J Heat Mass Transf 40 1997 1591 1600
21. J Roth, G Olson, D Jacobson, and J Poate Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion-implantation Appl Phys Lett 57 1990 1340 1342
22. M von Allmen, S Lau, J Mayer, and W Tseng Solid state epitaxial growth of deposited Si films Appl Phys Lett 35 1979 280 282
23. L Hung, S Lau, M von Allmen, J Mayer, B Ullrich, and J Baker et al. Epitaxial growth of Si deposited on (100) Si Appl Phys Lett 37 1980 909 911