Annealing of a-Si:H thin film by rapid thermal process

Solid State Phenomena

Volumn 181-182, Issue , 2012, Pages 409-412

  Wang, Yucang ^a   Jin, Ruimin ^b,c  

^a Nanyang Medical College   (China)

^b NANYANG INSTITUTE OF TECHNOLOGY   (China)

^c Postdoctoral workstation Ancai Hi Tech Co Ltd   (China)

Author keywords

A Si: H thin film; Crystallization; PECVD

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ANNEALING; CRYSTALLIZATION; CRYSTALS; LIQUID CRYSTALS; METALLIC FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS; X RAY DIFFRACTION; AMORPHOUS SILICON;

A-SI:H; AMORPHOUS SILICON FILM; ANNEALING TEMPERATURES; MICRO-RAMAN SCATTERING; RAPID THERMAL PROCESS; SCANNING ELECTRON MICROSCOPE; SILICON FILMS;

AMORPHOUS SILICON; THIN FILMS;

EID: 82355163206     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.181-182.409     Document Type: Conference Paper

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