Study on the mechanism of rapid solid-phase recrystallization of hydrogenated amorphous silicon film by rapid thermal processing

Thin Solid Films

Volumn 518, Issue 15, 2010, Pages 4473-4476

  Gao, Xiaoyong ^a   Feng, Hongliang ^a   Lin, Qinggeng ^a   Zhang, Liwei ^a   Liu, Xuwei ^a   Zhao, Jiantao ^a   Liu, Yufeng ^a   Chen, Yongsheng ^a   Gu, Jinhua ^a   Yang, Shie ^a   Li, Weiqiang ^a   Lu, Jingxiao ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Chemical vapor deposition; Microcrystalline silicon film; Raman spectroscopy; Rapid thermal annealing

Indexed keywords

A-SI:H; ANNEALING PROCEDURES; GROUND-STATE PRECURSORS; HIGH QUALITY; HYDROGENATED AMORPHOUS SILICON FILMS; HYDROGENATED MICROCRYSTALLINE SILICON; MICROCRYSTALLINE SILICON FILM; MICROCRYSTALLINE SILICON FILMS; QUARTZ GLASS SUBSTRATES; RADIO FREQUENCY PLASMA; RAMAN SPECTROMETRIES; RECRYSTALLIZATIONS; SHORT-WAVELENGTH; SOLID-PHASE; X RAY DIFFRACTOMETRY;

AMORPHOUS FILMS; HYDROGENATION; INTERNET PROTOCOLS; METALLIC FILMS; MICROCRYSTALLINE SILICON; OXIDE MINERALS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUARTZ; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; RECRYSTALLIZATION (METALLURGY); SUBSTRATES; VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS;

AMORPHOUS SILICON;

EID: 77953132279     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.02.032     Document Type: Article

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