Crystallization of hydrogenated amorphous silicon by rapid thermal method

Key Engineering Materials

Volumn 428-429, Issue , 2010, Pages 444-446

  Jin, Ruimin ^a,b   Li, Dingzhen ^a   Chen, Lan Li ^a   Guo, Xinfeng ^a   Lu, Jingxiao ^b  

^a NANYANG INSTITUTE OF TECHNOLOGY   (China)

^b ZHENGZHOU UNIVERSITY   (China)

Author keywords

a Si: H film; PECVD; Rapid thermal annealing

Indexed keywords

LIQUID CRYSTALS; METALLIC FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAMAN SCATTERING; RAPID THERMAL ANNEALING; SUBSTRATES; THIN FILMS;

A-SI:H; AMORPHOUS SILICON FILM; GLASS SUBSTRATES; RAPID THERMAL ANNEALING (RTA); SCANNING ELECTRONIC MICROSCOPES; THERMAL METHODS;

AMORPHOUS SILICON;

EID: 75749117858     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/KEM.428-429.444     Document Type: Conference Paper

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