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Materials Science in Semiconductor Processing

Volumn 54, Issue , 2016, Pages 1-5

Effect of growth temperature on diode parameters of n-ZnO/p-Si heterojuction diodes grown by atomic layer deposition

(5) Sahu, V K a Misra, P a Ajimsha, R S a Das, Amit K a Singh, B a

a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY (India)

Author keywords

Atomic layer deposition; Diode parameters; Heterojuction; ZnO thin film

Indexed keywords

ATOMS; CAPACITANCE; CARRIER CONCENTRATION; DEPOSITION; DIODES; ELECTRIC RECTIFIERS; GROWTH TEMPERATURE; HETEROJUNCTIONS; METALLIC FILMS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE; THIN FILMS; ZINC OXIDE;

CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT-VOLTAGE CHARACTERIZATION; DIODE PARAMETERS; ELECTRON CONCENTRATION; HETERO-JUCTION; REVERSE-SATURATION CURRENTS; ZNO THIN FILM; ZNO/P-SI HETEROJUNCTIONS;

ATOMIC LAYER DEPOSITION;

EID: 84976367227 PISSN: 13698001 EISSN: None Source Type: Journal
DOI: 10.1016/j.mssp.2016.06.006 Document Type: Article

Times cited : (33)

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