Capacitance-voltage characteristics of Si and Ge nanomembrane based flexible metal-oxide-semiconductor devices under bending conditions

Applied Physics Letters

Volumn 108, Issue 23, 2016, Pages

  Cho, Minkyu ^a,b   Seo, Jung Hun ^a   Park, Dong Wook ^a   Zhou, Weidong ^c   Ma, Zhenqiang ^a  

^a University of Wisconsin Madison   (United States)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c University of Texas at Arlington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; CAPACITANCE; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; LOW-K DIELECTRIC; METALS; NANOSTRUCTURES; OXIDE SEMICONDUCTORS; SEMICONDUCTING SILICON; SILICA; SILICON OXIDES; STRAIN; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

BASIC BUILDING BLOCK; CAPACITANCE VOLTAGE CHARACTERISTIC; ELECTRICAL CHARACTERISTIC; METAL OXIDE SEMICONDUCTOR; PLASTIC SUBSTRATES; SEMICONDUCTOR NANOMEMBRANES; SINGLE CRYSTALLINE SILICON; THIN FILM TRANSISTORS (TFTS);

MOS DEVICES;

EID: 84974534364     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4953458     Document Type: Article

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