High-performance Ge metal-oxide-semiconductor field-effect transistors with a gate stack fabricated by ultrathin SiO2/GeO2 bilayer passivation

Applied Physics Express

Volumn 4, Issue 5, 2011, Pages

  Yamamoto, Keisuke ^a   Ueno, Ryuji ^a   Yamanaka, Takeshi ^a   Hirayama, Kana ^a   Yang, Haigui ^a   Wang, Dong ^a   Nakashima, Hiroshi ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; ELECTRICAL CHARACTERISTIC; GATE STACKS; GATE-LAST; INTERFACE STATE DENSITY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOSFETS; ON/OFF RATIO; P-MOSFETS; SOURCE/DRAIN JUNCTIONS; SURFACE ORIENTATION; ULTRA-THIN;

DIELECTRIC DEVICES; FABRICATION; GERMANIUM; GERMANIUM OXIDES; ION BEAMS; ION IMPLANTATION; LOGIC GATES; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; TRANSISTORS;

MOSFET DEVICES;

EID: 79956122587     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.051301     Document Type: Article

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