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International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn 2003-January, Issue , 2003, Pages 134-137

Temperature effect on ultra thin SiO2 time-dependent-dielectric-breakdown

(1) Cheung, K P a

a RUTGERS UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE INJECTION; KINETIC PARAMETERS; KINETIC THEORY; KINETICS;

ACCELERATION FACTORS; ANODE HOLE INJECTION MODELS; ELECTRON CURRENTS; EXPERIMENTAL VALUES; INJECTED ELECTRONS; NON-ARRHENIUS BEHAVIOR; QUANTITATIVE TREATMENT; TIME DEPENDENT DIELECTRIC BREAKDOWN;

DIELECTRIC MATERIALS;

EID: 84973662048 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/PPID.2003.1200941 Document Type: Conference Paper

Times cited : (2)

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