SCOPUS 정보 검색 플랫폼

Volumn 8, Issue 20, 2016, Pages 10792-10798

Wafer-scale growth of MoS2 thin films by atomic layer deposition

(7) Pyeon, Jung Joon a,b Kim, Soo Hyun a Jeong, Doo Seok a,c Baek, Seung Hyub a,c Kang, Chong Yun a,b Kim, Jin Sang a Kim, Seong Keun a

a Korea Institute of Science and Technology (South Korea)

b Korea University (South Korea)

c University of Science and Technology (UST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; DEPOSITION; FILM GROWTH; MOLYBDENUM; MOLYBDENUM COMPOUNDS; THIN FILMS;

CHEMICAL COMPOSITIONS; CRYSTALLINITIES; FILM PROPERTIES; HIGH TEMPERATURE; IMPURITY CONTENT; LOW GROWTH TEMPERATURE; POST ANNEALING; SELF-LIMITING GROWTHS;

ATOMIC LAYER DEPOSITION;

EID: 84971294373 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c6nr01346e Document Type: Article

Times cited : (139)

References (23)

1
- 79952406873
- B. Radisavljevic A. Radenovic J. Brivio V. Giacometti A. Kis Nat. Nanotechnol. 2011 6 147 150
- (2011) Nat. Nanotechnol. , vol.6 , pp. 147-150
- Radisavljevic, B.¹ Radenovic, A.² Brivio, J.³ Giacometti, V.⁴ Kis, A.⁵

2
- 84870438813
- D. Lembke A. Kis ACS Nano 2012 6 10070 10075
- (2012) ACS Nano , vol.6 , pp. 10070-10075
- Lembke, D.¹ Kis, A.²

3
- 84875318145
- X. Li J. T. Mullen Z. Jin K. M. Borysenko M. Buongiorno Nardelli K. W. Kim Phys. Rev. B: Condens. Matter 2013 87 115418
- (2013) Phys. Rev. B: Condens. Matter , vol.87 , pp. 115418
- Li, X.¹ Mullen, J.T.² Jin, Z.³ Borysenko, K.M.⁴ Buongiorno Nardelli, M.⁵ Kim, K.W.⁶

4
- 1542733380
- K. K. Kam B. A. Parkinson J. Phys. Chem. 1982 86 463 467
- (1982) J. Phys. Chem. , vol.86 , pp. 463-467
- Kam, K.K.¹ Parkinson, B.A.²

5
- 77957204738
- K. F. Mak C. Lee J. Hone J. Shan T. F. Heinz Phys. Rev. Lett. 2010 105 136805
- (2010) Phys. Rev. Lett. , vol.105 , pp. 136805
- Mak, K.F.¹ Lee, C.² Hone, J.³ Shan, J.⁴ Heinz, T.F.⁵

6
- 84920846601
- G. Fiori F. Bonaccorso G. Iannaccone T. Palacios D. Neumaier A. Seabaugh S. K. Banerjee L. Colombo Nat. Nanotechnol. 2014 9 768 779
- (2014) Nat. Nanotechnol. , vol.9 , pp. 768-779
- Fiori, G.¹ Bonaccorso, F.² Iannaccone, G.³ Palacios, T.⁴ Neumaier, D.⁵ Seabaugh, A.⁶ Banerjee, S.K.⁷ Colombo, L.⁸

7
- 84898926021
- H. Li J. Wu Z. Yin H. Zhang Acc. Chem. Res. 2014 47 1067 1075
- (2014) Acc. Chem. Res. , vol.47 , pp. 1067-1075
- Li, H.¹ Wu, J.² Yin, Z.³ Zhang, H.⁴

8
- 84860329324
- Y.-H. Lee X.-Q. Zhang W. Zhang M.-T. Chang C.-T. Lin K.-D. Chang Y.-C. Yu J. T.-W. Wang C.-S. Chang L.-J. Li T.-W. Lin Adv. Mater. 2012 24 2320 2325
- (2012) Adv. Mater. , vol.24 , pp. 2320-2325
- Lee, Y.-H.¹ Zhang, X.-Q.² Zhang, W.³ Chang, M.-T.⁴ Lin, C.-T.⁵ Chang, K.-D.⁶ Yu, Y.-C.⁷ Wang, J.T.-W.⁸ Chang, C.-S.⁹ Li, L.-J.¹⁰ Lin, T.-W.¹¹

9
- 84859577778
- Y. Zhan Z. Liu S. Najmaei P. Ajayan J. Lou Small 2012 8 966 971
- (2012) Small , vol.8 , pp. 966-971
- Zhan, Y.¹ Liu, Z.² Najmaei, S.³ Ajayan, P.⁴ Lou, J.⁵

10
- 84878702372
- Y. Yu C. Li Y. Liu L. Su Y. Zhang L. Cao Sci. Rep. 2013 3 1866
- (2013) Sci. Rep. , vol.3 , pp. 1866
- Yu, Y.¹ Li, C.² Liu, Y.³ Su, L.⁴ Zhang, Y.⁵ Cao, L.⁶

11
- 84921818384
- J. Jeon S. Jang S. Jeon G. Yoo Y. Jang J.-H. Park S. Lee Nanoscale 2015 7 1688 1695
- (2015) Nanoscale , vol.7 , pp. 1688-1695
- Jeon, J.¹ Jang, S.² Jeon, S.³ Yoo, G.⁴ Jang, Y.⁵ Park, J.-H.⁶ Lee, S.⁷

12
- 84929497997
- V. Kranthi Kumar S. Dhar T. H. Choudhury S. A. Shivashankar S. Raghavan Nanoscale 2015 7 7802 7810
- (2015) Nanoscale , vol.7 , pp. 7802-7810
- Kranthi Kumar, V.¹ Dhar, S.² Choudhury, T.H.³ Shivashankar, S.A.⁴ Raghavan, S.⁵

13
- 0344667722
- M. Leskela M. Ritala Angew. Chem., Int. Ed. 2003 42 5548 5554
- (2003) Angew. Chem., Int. Ed. , vol.42 , pp. 5548-5554
- Leskela, M.¹ Ritala, M.²

14
- 84925068475
- T. Sarnet T. Hatanpää E. Puukilainen M. Mattinen M. Vehkamäki K. Mizohata M. Ritala M. Leskelä J. Phys. Chem. A 2015 119 2298 2306
- (2015) J. Phys. Chem. A , vol.119 , pp. 2298-2306
- Sarnet, T.¹ Hatanpää, T.² Puukilainen, E.³ Mattinen, M.⁴ Vehkamäki, M.⁵ Mizohata, K.⁶ Ritala, M.⁷ Leskelä, M.⁸

15
- 84900504429
- C. Bae T. Böhnert J. Gooth S. Lim S. Lee H. Kim S. Heimann S. Schulz H. Shin K. Nielsch Semicond. Sci. Technol. 2014 29 064003
- (2014) Semicond. Sci. Technol. , vol.29 , pp. 064003
- Bae, C.¹ Böhnert, T.² Gooth, J.³ Lim, S.⁴ Lee, S.⁵ Kim, H.⁶ Heimann, S.⁷ Schulz, S.⁸ Shin, H.⁹ Nielsch, K.¹⁰

16
- 78650443592
- M. Diskus O. Nilsen H. Fjellvag J. Mater. Chem. 2011 21 705 710
- (2011) J. Mater. Chem. , vol.21 , pp. 705-710
- Diskus, M.¹ Nilsen, O.² Fjellvag, H.³

17
- 84900856084
- D. K. Nandi U. K. Sen D. Choudhury S. Mitra S. K. Sarkar ACS Appl. Mater. Interfaces 2014 6 6606 6615
- (2014) ACS Appl. Mater. Interfaces , vol.6 , pp. 6606-6615
- Nandi, D.K.¹ Sen, U.K.² Choudhury, D.³ Mitra, S.⁴ Sarkar, S.K.⁵

18
- 84897626647
- D. H. K. Jackson B. A. Dunn Y. Guan T. F. Kuech AIChE J. 2014 60 1278 1286
- (2014) AIChE J. , vol.60 , pp. 1278-1286
- Jackson, D.H.K.¹ Dunn, B.A.² Guan, Y.³ Kuech, T.F.⁴

19
- 84908868640
- Z. Jin S. Shin D. H. Kwon S.-J. Han Y.-S. Min Nanoscale 2014 6 14453 14458
- (2014) Nanoscale , vol.6 , pp. 14453-14458
- Jin, Z.¹ Shin, S.² Kwon, D.H.³ Han, S.-J.⁴ Min, Y.-S.⁵

20
- 0010357276
- A. V. Naumkin, A. Kraut-Vass, S. W. Gaarenstromm and C. J. Powell, NIST Standard Reference Database 20, http://srdata.nist.gov/xps/Default.aspx
- NIST Standard Reference Database 20
- Naumkin, A.V.¹ Kraut-Vass, A.² Gaarenstromm, S.W.³ Powell, C.J.⁴

21
- 84869074729
- Q. H. Wang K. Kalantar-Zadeh A. Kis J. N. Coleman M. S. Strano Nat. Nanotechnol. 2012 7 699 712
- (2012) Nat. Nanotechnol. , vol.7 , pp. 699-712
- Wang, Q.H.¹ Kalantar-Zadeh, K.² Kis, A.³ Coleman, J.N.⁴ Strano, M.S.⁵

22
- 84859603673
- H. Li Q. Zhang C. C. R. Yap B. K. Tay T. H. T. Edwin A. Olivier D. Baillargeat Adv. Funct. Mater. 2012 22 1385 1390
- (2012) Adv. Funct. Mater. , vol.22 , pp. 1385-1390
- Li, H.¹ Zhang, Q.² Yap, C.C.R.³ Tay, B.K.⁴ Edwin, T.H.T.⁵ Olivier, A.⁶ Baillargeat, D.⁷

23
- 77952896966
- C. Lee H. Yan L. E. Brus T. F. Heinz J. Hone S. Ryu ACS Nano 2010 4 2695 2700
- (2010) ACS Nano , vol.4 , pp. 2695-2700
- Lee, C.¹ Yan, H.² Brus, L.E.³ Heinz, T.F.⁴ Hone, J.⁵ Ryu, S.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.