Thermopower engineering of Bi2Te3 without alloying: The interplay between nanostructuring and defect activation

Semiconductor Science and Technology

Volumn 29, Issue 6, 2014, Pages

  Bae, Changdeuck ^a,b   Böhnert, Tim ^a   Gooth, Johannes ^a   Lim, Seulky ^b   Lee, Seonhee ^b   Kim, Hyunchul ^b   Heimann, Stefan ^c   Schulz, Stephan ^c   Shin, Hyunjung ^b   Nielsch, Kornelius ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

^b Sungkyunkwan University   (South Korea)

^c UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

atomic layer deposition; thermopower; topological insulators

Indexed keywords

ALLOYING; ATOMIC LAYER DEPOSITION; BISMUTH; DEFECTS; DEPOSITION; ELECTRIC POWER FACTOR; THERMOELECTRICITY; THIN FILMS;

BI2TE3 THIN FILMS; DEPOSITION TEMPERATURES; DIFFERENT SIZES; LOW TEMPERATURES; NANO-STRUCTURING; PHONON ENGINEERING; THERMO-ELECTRIC MATERIALS; TOPOLOGICAL INSULATORS;

THERMOELECTRIC POWER;

EID: 84900504429     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/29/6/064003     Document Type: Article

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