Atomic layer deposition and characterization of Bi2Te3 thin films

Journal of Physical Chemistry A

Volumn 119, Issue 11, 2015, Pages 2298-2306

  Sarnet, Tiina ^a   Hatanpää, Timo ^a   Puukilainen, Esa ^a   Mattinen, Miika ^a   Vehkamäki, Marko ^a   Mizohata, Kenichiro ^a   Ritala, Mikko ^a   Leskelä, Markku ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; THIN FILMS;

DEPOSITION CYCLES; GROWTH PROPERTIES; IMPURITY CONTENT; PREFERRED ORIENTATIONS; RHOMBOHEDRAL PHASE; THERMOELECTRIC PROPERTIES;

ATOMIC LAYER DEPOSITION;

EID: 84925068475     PISSN: 10895639     EISSN: 15205215     Source Type: Journal    
DOI: 10.1021/jp5063429     Document Type: Article

References (36)

1. Goldsmid, H.; Douglas, R. The Use of Semiconductors in Thermoelectric Refrigeration Br. J. Appl. Phys. 1954, 5, 386
2. Wright, D. Thermoelectric Properties of Bismuth Telluride and its Alloys Nature 1958, 181, 834
3. Cadoff, I.; Miller, E. Thermoelectric Materials and Devices; Reinhold Publishing Corporation: New York, 1960.
4. Rowe, D., Ed. CRC Handbook of Thermoelectrics; CRC: Boca Raton, Florida, USA, 1995.
5. Sootsman, J.; Chung, D.; Kanatzidis, M. New and Old Concepts in Thermoelectric Materials Angew. Chem., Int. Ed. 2009, 48, 8616-8639
6. Fleurial, J.; Gailliard, L.; Triboulet, R.; Scherrer, H.; Scherrer, S. Thermal Properties of High Quality Single Crystals of Bismuth Telluride-Part I: Experimental Characterization J. Phys. Chem. Solids 1988, 49, 1237-1247
7. DiSalvo, F. J. Thermoelectric Cooling and Power Generation Science 1999, 285, 703-706
8. 3 Science 2009, 325, 178-181
9. 3 with a Single Dirac Cone on the Surface Nat. Phys. 2009, 5, 438-442
10. 3 Phys. Rev. Lett. 2009, 103, 146401
11. Moore, J. E. The Birth of Topological Insulators Nature 2010, 464, 194-198
12. Qi, X.-L.; Zhang, S.-C. Topological Insulators and Superconductors Rev. Mod. Phys. 2011, 83, 1057-1110
13. Hasan, M. Z.; Kane, C. L. Colloquium: Topological Insulators Rev. Mod. Phys. 2010, 82, 3045-3067
14. Moore, J. Topological Insulators: The Next Generation Nat. Phys. 2009, 5, 378-380
15. Hicks, L. D.; Dresselhaus, M. S. Effect of Quantum-Well Structures on the Thermoelectric Figure of Merit Phys. Rev. B 1993, 47, 12727-12731
16. Leskelä, M.; Ritala, M. Atomic Layer Deposition Chemistry: Recent Developments and Future Challenges Angew. Chem., Int. Ed. 2003, 42, 5548-5554
17. Ma, Y.; Ahlberg, E.; Sun, Y.; Iversen, B. B.; Palmqvist, A. E. Thermoelectric Properties of Thin Films of Bismuth Telluride Electrochemically Deposited on Stainless Steel Substrates Electrochim. Acta 2011, 56, 4216-4223
18. Golia, S.; Arora, M.; Sharma, R.; Rastogi, A. Electrochemically Deposited Bismuth Telluride Thin Films Curr. Appl. Phys. 2003, 3, 195-197
19. 3-Based Materials J. Appl. Phys. 2009, 106, 073503
20. Das, V. D.; Soundararajan, N. Size and Temperature Effects on the Thermoelectric Power and Electrical Resistivity of Bismuth Telluride Thin Films Phys. Rev. B 1988, 37, 4552-4559
21. 3 Thin Films Deposited by Co-Evaporation on Polyimide for Thermoelectric Applications Vacuum 2008, 82, 1499-1502
22. 3 Films Deposited by the Close Space Vapor Transport Method Using Scanning Electron Microscopy and X-ray Diffraction Techniques Thin Solid Films 2012, 520, 3865-3870
23. Chen, X.; Ma, X.-C.; He, K.; Jia, J.-F.; Xue, Q.-K. Molecular Beam Epitaxial Growth of Topological Insulators Adv. Mater. 2011, 23, 1162-1165
24. 3 Thin Films Thin Solid Films 1996, 280, 61-66
25. 3 Thermoelectric Films Appl. Surf. Sci. 2007, 254, 1249-1254
26. 3 by Metal Organic Chemical Vapor Deposition Thin Solid Films 1997, 303, 1-3
27. Venkatasubramanian, R.; Siivola, E.; Colpitts, T.; OQuinn, B. Thin-Film Thermoelectric Devices with High Room-Temperature Figures of Merit Nature 2001, 413, 597-602
28. Pore, V.; Hatanpää, T.; Ritala, M.; Leskelä, M. Atomic Layer Deposition of Metal Tellurides and Selenides Using Alkylsilyl Compounds of Tellurium and Selenium J. Am. Chem. Soc. 2009, 131, 3478-3480
29. 3 by Atomic Layer Deposition ECS J. Solid State Sci. Technol. 2014, 3, P95-P100
30. Hatanpää, T.; Ritala, M.; Leskelä, M. Precursors as Enablers of ALD Technology: Contributions from University of Helsinki Coord. Chem. Rev. 2013, 257, 3297-3322
31. Waldo, R. An Iteration Procedure to Calculate Film Compositions and Thicknesses in Electron-Probe Microanalysis. Microbeam Analysis 1988: Proceedings of the 23rd Annual Conference of the Microbeam Analysis Society; San Francisco Press: San Francisco, 1988; p 310.
32. Ritala, M.; Sarnet, T.; Hatanpää, T.; Leskelä, M.; Raoux, S. Atomic Layer Deposition of Phase Change Materials. E\PCOS 2012, Tampere, Finland; http://www.epcos.org/library/library2012.htm.
33. Sarnet, T.; Pore, V.; Hatanpää, T.; Ritala, M.; Leskelä, M.; Schrott, A.; Zhu, Y.; Raoux, S.; Cheng, H.-Y. Atomic Layer Deposition and Characterization of GeTe Thin Films J. Electrochem. Soc. 2011, 158, D694-D697
34. Shayduk, R.; Braun, W. Epitaxial Films for Ge-Sb-Te Phase Change Memory J. Cryst. Growth 2009, 311, 2215-2219
35. 5 Thin Films Microelectron. Eng. 2009, 86, 1946-1949
36. VI-B Semiconductors J. Phys. Chem. Solids 1957, 2, 240-251