High efficiency n-Si/p-Cu2O core-shell nanowires photodiode prepared by atomic layer deposition of Cu2O on well-ordered Si nanowires array

Electronic Materials Letters

Volumn 12, Issue 3, 2016, Pages 404-410

  Kim, Hangil ^a   Kim, Soo Hyun ^a   Ko, Kyung Yong ^b   Kim, Hyungjun ^b   Kim, Jaehoon ^c   Oh, Jihun ^c   Lee, Han Bo Ram ^d  

^a Yeungnam University   (South Korea)

^b Yonsei University   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^d SolarLight Ltd   (South Korea)

Author keywords

atomic layer deposition; photodiode; Si nanowires; Si Cu2O heterojunction

Indexed keywords

ASPECT RATIO; ATOMS; CATALYSTS; COPPER; DEPOSITION; HETEROJUNCTIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NANOSPHERES; NANOWIRES; PHOTODIODES; SHELLS (STRUCTURES); SILICON; SPECTROMETERS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION;

CORE-SHELL NANOWIRES; DIAMETER DISTRIBUTIONS; ENERGY DISPERSIVE SPECTROMETERS; METAL ASSISTED ETCHINGS; NANO SPHERE LITHOGRAPHY; PHOTOCURRENT DENSITY; SI NANOWIRE; ULTRAVIOLET ILLUMINATION;

ATOMIC LAYER DEPOSITION;

EID: 84964701677     PISSN: 17388090     EISSN: 20936788     Source Type: Journal    
DOI: 10.1007/s13391-016-5356-2     Document Type: Article

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