Schottky diode characteristics and 1/f noise of high sensitivity reduced graphene oxide/Si heterojunction photodetector

Journal of Applied Physics

Volumn 119, Issue 12, 2016, Pages

  Zhu, Miao ^a   Li, Xinming ^b   Li, Xiao ^a   Zang, Xiaobei ^a   Zhen, Zhen ^a   Xie, Dan ^a   Fang, Ying ^b   Zhu, Hongwei ^a  

^a TSINGHUA UNIVERSITY   (China)

^b NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; HETEROJUNCTIONS; PHOTODETECTORS; PHOTOVOLTAIC EFFECTS; SCHOTTKY BARRIER DIODES;

BARRIER INHOMOGENEITIES; HETEROJUNCTION PHOTODETECTORS; HIGH SENSITIVITY; INTERFACIAL PROPERTY; PHOTOVOLTAIC PERFORMANCE; REDUCED GRAPHENE OXIDES; REDUCED GRAPHENE OXIDES (RGO); STRUCTURAL DEFECT;

GRAPHENE;

EID: 84962204077     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4944945     Document Type: Article

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