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Applied Physics Letters

Volumn 102, Issue 24, 2013, Pages

Back-gate tuning of Schottky barrier height in graphene/zinc-oxide photodiodes

(5) Lee, Sejoon a Lee, Youngmin a Young Kim, Deuk a Song, Emil B b Min Kim, Sung c

a Dongguk University (South Korea)

b UNIVERSITY OF CALIFORNIA (United States)

c SAMSUNG Electronics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE BIAS; BACK-GATE VOLTAGES; GRAPHENE SHEETS; IDEALITY FACTORS; PHOTOEXCITED CARRIERS; PHOTORESPONSES; RECTIFYING BEHAVIORS; SCHOTTKY BARRIER HEIGHTS;

PHOTODIODES; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 84879816259 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4812198 Document Type: Article

Times cited : (41)

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