Electric Field Effects on Spin Splitting of Two-Dimensional van der Waals Arsenene/FeCl2 Heterostructures

Journal of Physical Chemistry C

Volumn 120, Issue 10, 2016, Pages 5613-5618

  Song, Yan ^a   Li, Dong ^a   Mi, Wenbo ^a   Wang, Xiaocha ^b   Cheng, Yingchun ^c  

^a TIANJIN UNIVERSITY   (China)

^b TIANJIN UNIVERSITY OF TECHNOLOGY   (China)

^c NANJING TECH UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRONIC PROPERTIES; HETEROJUNCTIONS; OHMIC CONTACTS; SPIN HALL EFFECT; VAN DER WAALS FORCES;

AB INITIO SIMULATIONS; ANOMALOUS HALL EFFECTS; CONDUCTION-BAND MINIMUM; CONTINUOUS MODULATION; ELECTRIC POTENTIAL DIFFERENCE; INTERFACIAL COUPLINGS; STACKING CONFIGURATIONS; STRUCTURAL AND ELECTRONIC PROPERTIES;

ELECTRIC FIELD EFFECTS;

EID: 84961779035     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/acs.jpcc.6b01062     Document Type: Article

References (55)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669 10.1126/science.1102896
2. Geim, A. K.; Novoselov, K. S. The Rise of Graphene Nat. Mater. 2007, 6, 183-191 10.1038/nmat1849
3. Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.; Novoselov, K. S.; Geim, A. K. The Electronic Properties of Graphene Rev. Mod. Phys. 2009, 81, 109-162 10.1103/RevModPhys.81.109
4. Cahangirov, S.; Topsakal, M.; Akturk, E.; Sahin, H.; Ciraci, S. Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium Phys. Rev. Lett. 2009, 102, 236804 10.1103/PhysRevLett.102.236804
5. Vogt, P.; De Padova, P.; Quaresima, C.; Avila, J.; Frantzeskakis, E.; Asensio, M. C.; Resta, A.; Ealet, B.; Le Lay, G. Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon Phys. Rev. Lett. 2012, 108, 155501 10.1103/PhysRevLett.108.155501
6. Kara, A.; Enriquez, H.; Seitsonen, A. P.; Lew Yan Voon, L. C.; Vizzini, S.; Aufray, B.; Oughaddou, H. A Review on Silicene-New Candidate for Electronics Surf. Sci. Rep. 2012, 67, 1-18 10.1016/j.surfrep.2011.10.001
7. Oughaddou, H.; Enriquez, H.; Tchalala, M. R.; Yildirim, H.; Mayne, A. J.; Bendounan, A.; Dujardin, G.; Ait Ali, M.; Kara, A. Silicene, A Promising New 2D Material Prog. Surf. Sci. 2015, 90, 46-83 10.1016/j.progsurf.2014.12.003
8. Bianco, E.; Butler, S.; Jiang, S.; Restrepo, O. D.; Windl, W.; Goldberger, J. E. Stability and Exfoliation of Germanane: A germanium Graphane Analogue ACS Nano 2013, 7, 4414-4421 10.1021/nn4009406
9. Li, L.; Lu, S. Z.; Pan, J.; Qin, Z.; Wang, Y. Q.; Wang, Y.; Cao, C. Y.; Du, S.; Gao, H. J. Buckled Germanene Formation on Pt(111) Adv. Mater. 2014, 26, 4820-4824 10.1002/adma.201400909
10. Davila, M. E.; Xian, L.; Cahangirov, S.; Rubio, A.; Le Lay, G. Germanene: A Novel Two-Dimensional Germanium Allotrope Akin to Graphene and Silicene New J. Phys. 2014, 16, 095002 10.1088/1367-2630/16/9/095002
11. Watanabe, K.; Taniguchi, T.; Kanda, H. Direct-Bandgap Properties and Evidence for Ultraviolet Lasing of Hexagonal Boron Nitride Single Crystal Nat. Mater. 2004, 3, 404-409 10.1038/nmat1134
12. Song, L.; Ci, L.; Lu, H.; Sorokin, P. B.; Jin, C.; Ni, J.; Kvashnin, A. G.; Kvashnin, D. G.; Lou, J.; Yakobson, B. I. et al. Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers Nano Lett. 2010, 10, 3209-3215 10.1021/nl1022139
13. Shi, Y.; Hamsen, C.; Jia, X.; Kim, K. K.; Reina, A.; Hofmann, M.; Hsu, A. L.; Zhang, K.; Li, H.; Juang, Z. Y. et al. Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition Nano Lett. 2010, 10, 4134-4139 10.1021/nl1023707
14. Wang, X.; Maeda, K.; Thomas, A.; Takanabe, K.; Xin, G.; Carlsson, J. M.; Domen, K.; Antonietti, M. A Metal-Free Polymeric Photocatalyst for Hydrogen Production from Water under Visible Light Nat. Mater. 2009, 8, 76-80 10.1038/nmat2317
15. Wang, X.; Maeda, K.; Chen, X.; Takanabe, K.; Domen, K.; Hou, Y.; Fu, X.; Antonietti, M. Polymer Semiconductors for Artificial Photosynthesis: Hydrogen Evolution by Mesoporous Graphitic Carbon Nitride with Visible Light J. Am. Chem. Soc. 2009, 131, 1680-1681 10.1021/ja809307s
16. 4. Bilayer: Enhanced by Interlayer Coupling J. Phys. Chem. Lett. 2012, 3, 3330-3334 10.1021/jz301536k
17. Claeyssens, F.; Freeman, C. L.; Allan, N. L.; Sun, Y.; Ashfold, M. N. R.; Harding, J. H. Growth of ZnO Thin Films-Experiment and Theory J. Mater. Chem. 2005, 15, 139-148 10.1039/b414111c
18. Freeman, C. L.; Claeyssens, F.; Allan, N. L. et al. Graphitic Nanofilms as Precursors to Wurtzite Films: Theory Phys. Rev. Lett. 2006, 96, 066102 10.1103/PhysRevLett.96.066102
19. Tusche, C.; Meyerheim, H. L.; Kirschner, J. Observation of Depolarized ZnO(0001) Monolayers: Formation of Unreconstructed Planar Sheets Phys. Rev. Lett. 2007, 99, 026102 10.1103/PhysRevLett.99.026102
20. Zhu, Z. Y.; Cheng, Y. C.; Schwingenschlogl, U. Giant Spin-Orbit-Induced Spin Splitting in Two-Dimensional Transition-Metal Dichalcogenide Semiconductors Phys. Rev. B: Condens. Matter Mater. Phys. 2011, 84, 153402 10.1103/PhysRevB.84.153402
21. 2 Phys. Rev. B: Condens. Matter Mater. Phys. 2013, 88, 245447 10.1103/PhysRevB.88.245447
22. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805 10.1103/PhysRevLett.105.136805
23. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150 10.1038/nnano.2010.279
24. 2 phototransistors ACS Nano 2012, 6, 74-80 10.1021/nn2024557
25. 2 and Other Group-VI Dichalcogenides Phys. Rev. Lett. 2012, 108, 196802 10.1103/PhysRevLett.108.196802
26. Feng, W.; Yao, Y.; Zhu, W.; Zhou, J.; Yao, W.; Xiao, D. Intrinsic Spin Hall Effect in Monolayers of Group-VI Dichalcogenides: A First-Principles Study Phys. Rev. B: Condens. Matter Mater. Phys. 2012, 86, 165108 10.1103/PhysRevB.86.165108
27. Li, L.; Yu, Y.; Ye, G.; Ge, Q.; Ou, X.; Wu, H.; Feng, D.; Chen, X.; Zhang, Y. Black Phosphorus Field-Effect Transistors Nat. Nanotechnol. 2014, 9, 372-377 10.1038/nnano.2014.35
28. Liu, H.; Neal, A. T.; Zhu, Z.; Luo, Z.; Xu, X.; Tomanek, D.; Ye, P. D. Phosphorene: An Unexplored 2D Semiconductor with A High Hole Mobility ACS Nano 2014, 8, 4033-4041 10.1021/nn501226z
29. Qiao, J.; Kong, X.; Hu, Z.; Yang, F.; Ji, W. High-Mobility Transport Anisotropy and Linear Dichroism in Few-Layer Black Phosphorus Nat. Commun. 2014, 5, 4475 10.1038/ncomms5475
30. Zhang, S.; Yan, Z.; Li, Y.; Chen, Z.; Zeng, H. Atomically Thin Arsenene and Antimonene: Semimetal-Semiconductor and Indirect-Direct Band-Gap Transitions Angew. Chem. 2015, 127, 3155-3158 10.1002/ange.201411246
31. 2 Appl. Phys. Lett. 2015, 106, 192404 10.1063/1.4921096
32. Dean, C.; Young, A. F.; Wang, L.; Meric, I.; Lee, G. H.; Watanabe, K.; Taniguchi, T.; Shepard, K.; Kim, P.; Hone, J. Graphene Based Heterostructures Solid State Commun. 2012, 152, 1275-1282 10.1016/j.ssc.2012.04.021
33. Geim, A. K.; Grigorieva, I. V. Van der Waals heterostructures Nature 2013, 499, 419-425 10.1038/nature12385
34. Wang, H.; Liu, F.; Fu, W.; Fang, Z.; Zhou, W.; Liu, Z. Two-Dimensional Heterostructures: Fabrication, Characterization, and Application Nanoscale 2014, 6, 12250-12272 10.1039/C4NR03435J
35. Niu, T.; Li, A. From Two-Dimensional Materials to Heterostructures Prog. Surf. Sci. 2015, 90, 21-45 10.1016/j.progsurf.2014.11.001
36. Ponomarenko, L. A.; Geim, A. K.; Zhukov, A. A.; Jalil, R.; Morozov, S. V.; Novoselov, K. S.; Grigorieva, I. V.; Hill, E. H.; Cheianov, V. V.; Falko, V. I. et al. Tunable Metal-Insulator Transition in Double-Layer Graphene Heterostructures Nat. Phys. 2011, 7, 958-961 10.1038/nphys2114
37. 2 Monolayers Nat. Mater. 2014, 13, 1135-1142 10.1038/nmat4091
38. 2 Semiconductors Nat. Mater. 2014, 13, 1096 10.1038/nmat4064
39. Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L. et al. Boron Nitride Substrates for High-Quality Graphene Electronics Nat. Nanotechnol. 2010, 5, 722-726 10.1038/nnano.2010.172
40. Lee, K. H.; Shin, H. J.; Lee, J.; Lee, I.; Kim, G. H.; Choi, J. Y.; Kim, S. W. Large-Scale Synthesis of High-Quality Hexagonal Boron Nitride Nanosheets for Large-Area Graphene Electronics Nano Lett. 2012, 12, 714 10.1021/nl203635v
41. Giovannetti, G.; Khomyakov, P. A.; Brocks, G.; Kelly, P. J.; van den Brink, J. Substrate-Induced Band Gap in Graphene on Hexagonal Boron Nitride: Ab Initio Density Functional Calculations Phys. Rev. B: Condens. Matter Mater. Phys. 2007, 76, 073103 10.1103/PhysRevB.76.073103
42. Britnell, L.; Ribeiro, R. M.; Eckmann, A.; Jalil, R.; Belle, B. D.; Mishchenko, A.; Kim, Y. J.; Gorbachev, R. V.; Georgiou, T.; Morozov, S. V. et al. Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films Science 2013, 340, 1311 10.1126/science.1235547
43. 2 by Intercalation Nanoscale 2014, 6, 4566 10.1039/c4nr00783b
44. 2 Substrate J. Phys. Chem. C 2014, 118, 19129 10.1021/jp5043359
45. Guo, Z.; Furuya, S.; Iwata, J.; Oshiyama, A. Absence and Presence of Dirac Electrons in Silicene on Substrates Phys. Rev. B: Condens. Matter Mater. Phys. 2013, 87, 235435 10.1103/PhysRevB.87.235435
46. Kresse, G.; Furthmüller, J. Efficient Iterative Schemes for Ab Initio Total-Energy Calculations Using A Plane-Wave Basis Set Phys. Rev. B: Condens. Matter Mater. Phys. 1996, 54, 11169 10.1103/PhysRevB.54.11169
47. Kresse, G.; Joubert, D. From Ultrasoft Pseudopotentials to The Projector Augmented-Wave Method Phys. Rev. B: Condens. Matter Mater. Phys. 1999, 59, 1758 10.1103/PhysRevB.59.1758
48. Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized Gradient Approximation Made Simple Phys. Rev. Lett. 1996, 77, 3865 10.1103/PhysRevLett.77.3865
49. Grimme, S. Semiempirical GGA-Type Density Functional Constructed with A Long-Range Dispersion Correction J. Comput. Chem. 2006, 27, 1787-1799 10.1002/jcc.20495
50. Graziano, G.; Klimes, J.; Fernandez-Alonso, F.; Michaelides, A. Improved Description of Soft Layered Materials with Van der Waals Density Functional Theory J. Phys.: Condens. Matter 2012, 24, 424216 10.1088/0953-8984/24/42/424216
51. Padilha, J. E.; Fazzio, A.; da Silva, A. J. R. Van der Waals Heterostructure of Phosphorene and Graphene: Tuning the Schottky Barrier and Doping by Electrostatic Gating Phys. Rev. Lett. 2015, 114, 066803 10.1103/PhysRevLett.114.066803
52. Henkelman, G.; Arnaldsson, A.; Jónsson, H. A Fast and Robust Algorithm for Bader Decomposition of Charge Density Comput. Mater. Sci. 2006, 36, 354-360 10.1016/j.commatsci.2005.04.010
53. Sanville, E.; Kenny, S. D.; Smith, R.; Henkelman, G. Improved Grid-Based Algorithm for Bader Charge Allocation J. Comput. Chem. 2007, 28, 899 10.1002/jcc.20575
54. Tang, W.; Sanville, E.; Henkelman, G. A Grid-Based Bader Analysis Algorithm without Lattice Bias J. Phys.: Condens. Matter 2009, 21, 084204 10.1088/0953-8984/21/8/084204
55. Nagaosa, N.; Sinova, J.; Onoda, S.; MacDonald, A. H.; Ong, N. P. Anomalous Hall Effect Rev. Mod. Phys. 2010, 82, 1539 10.1103/RevModPhys.82.1539