High temperature Raman investigation of few-layer MoTe2

Applied Physics Letters

Volumn 108, Issue 9, 2016, Pages

  Zhang, Hongguang ^a   Zhou, Wei ^a   Li, Xuefei ^a   Xu, Jun ^a   Shi, Yi ^a   Wang, Baigeng ^a   Miao, Feng ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FERROELECTRIC FILMS; ION SENSITIVE FIELD EFFECT TRANSISTORS; LATTICE VIBRATIONS; OPTOELECTRONIC DEVICES; POTENTIAL ENERGY;

INCREASING TEMPERATURES; INTERATOMIC POTENTIAL; OUT-OF-PLANE VIBRATIONS; RAMAN INVESTIGATIONS; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENT; TWO-DIMENSIONAL MATERIALS; WORKING TEMPERATURES;

TEMPERATURE;

EID: 84960510653     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4943139     Document Type: Article

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