Double resonance Raman modes in monolayer and few-layer MoTe2

Physical Review B - Condensed Matter and Materials Physics

Volumn 91, Issue 20, 2015, Pages

  Guo, Huaihong ^a   Yang, Teng ^a,b   Yamamoto, Mahito ^c   Zhou, Lin ^d   Ishikawa, Ryo ^e   Ueno, Keiji ^e   Tsukagoshi, Kazuhito ^c   Zhang, Zhidong ^b   Dresselhaus, Mildred S ^d,f   Saito, Riichiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF METAL RESEARCH   (China)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d Department of Electrical Engineering and Computer Science   (United States)

^e SAITAMA UNIVERSITY   (Japan)

^f MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84929598374     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.91.205415     Document Type: Article

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60. It is worth pointing out that our assignment of the (Equation presented)-point phonon for (Equation presented) is similar to that for (Equation presented) by Berkdemir [41], but in our case is based on a different intervalley process. Berkdemir [41] used a laser line (514.5 nm) which matches the (Equation presented)-point gap of (Equation presented) and therefore may trigger an intervalley electron-phonon process between the (Equation presented) and (Equation presented) points, both of which have almost the same band energy. Thus Berkdemir's model should be used for (Equation presented) and our model for (Equation presented).
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