Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets

Applied Physics Letters

Volumn 107, Issue 1, 2015, Pages

  Taube, A ^a   Lapinska A ^a   Judek, J ^a   Zdrojek, M ^a  

^a WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

LAYERED SEMICONDUCTORS; NANOSHEETS; PHONONS; RHENIUM COMPOUNDS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING TIN COMPOUNDS; TEMPERATURE DISTRIBUTION; TIN COMPOUNDS; TRANSITION METALS;

HIGH TEMPERATURE; LOW TEMPERATURES; NANOSCALE ELECTRONICS; NONLINEAR TEMPERATURE; OPTOELECTRONICS DEVICES; RESEARCH FIELDS; TEMPERATURE DEPENDENCE; TRANSITION METAL DICHALCOGENIDES;

SELENIUM COMPOUNDS;

EID: 84936976620     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4926508     Document Type: Article

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