SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 91, Issue , 2012, Pages 144-146

Resistive switching characteristics of thin NiO film based flexible nonvolatile memory devices

(5) Wang, Hongjun a Zou, Changwei b Zhou, Lin a Tian, Canxin a Fu, Dejun a

a WUHAN UNIVERSITY (China)

b LINGNAN NORMAL UNIVERSITY (China)

Author keywords

NiO; Nonvolatile memory; Resistance switching; RRAM

Indexed keywords

CU FOIL; FABRICATED DEVICE; FLEXIBLE DEVICE; NIO; NIO FILMS; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; POTENTIAL APPLICATIONS; RADIO FREQUENCY MAGNETRON SPUTTERING; RANDOM ACCESS MEMORIES; RESISTANCE SWITCHING; RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; RRAM;

COPPER; METAL CLADDING; NONVOLATILE STORAGE; SWITCHING; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 84855547715 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.05.037 Document Type: Article

Times cited : (41)

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