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Ceramics International

Volumn 39, Issue SUPPL.1, 2013, Pages

Resistive switching properties of TiO2 film for flexible non-volatile memory applications

(3) Lin, Chun Chieh a Liao, Jhih Wei a Li, Wang Ying a

a NATIONAL DONG HWA UNIVERSITY (Taiwan)

Author keywords

B. Defects; D. TiO2; Flexible; Resistive switching

Indexed keywords

FLEXIBLE; FLEXIBLE SUBSTRATE; NON-VOLATILE MEMORY; NON-VOLATILE MEMORY APPLICATION; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; RESISTIVE SWITCHING MEMORY; TIO;

DATA STORAGE EQUIPMENT; FLEXIBLE ELECTRONICS; TITANIUM DIOXIDE;

SWITCHING SYSTEMS;

EID: 84875699568 PISSN: 02728842 EISSN: None Source Type: Journal
DOI: 10.1016/j.ceramint.2012.10.171 Document Type: Conference Paper

Times cited : (25)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.