Effect of top electrode materials on the nonvolatile resistive switching characteristics of CCTO films

IEEE Transactions on Magnetics

Volumn 47, Issue 3, 2011, Pages 633-636

  Lin, Chun Chieh ^a   Chang, Yi Peng ^a   Ho, Chia Cheng ^b   Shen, Yu Shu ^c   Chiou, Bi Shiou ^c  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Electrodes; nonvolatile memory; resistive random access memory; work function

Indexed keywords

CALCIUM ALLOYS; COPPER ALLOYS; ELECTRODES; RRAM; SOL-GELS; SWITCHING; TITANIUM ALLOYS; WORK FUNCTION;

ELECTRODE MATERIAL; NON-VOLATILE MEMORY; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; RESISTIVE SWITCHING BEHAVIORS; SOL-GEL SPIN COATING METHOD; TOP-ELECTRODE MATERIALS;

FILMS;

EID: 79952159286     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2010.2101584     Document Type: Article

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