Research on the piezoelectric properties of AlN thin films for MEMS applications

Micromachines

Volumn 6, Issue 9, 2015, Pages 1236-1248

  Zhang, Meng ^a   Yang, Jian ^a   Si, Chaowei ^a   Han, Guowei ^a   Zhao, Yongmei ^a,b   Ning, Jin ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

Aluminum nitride; Finite element method; MEMS; Piezoelectric coefficient; Piezoresponse force microscopy

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC FIELDS; ELECTRODES; MEMS; PIEZOELECTRICITY; SCANNING PROBE MICROSCOPY; THIN FILMS;

EFFECTIVE APPROACHES; ELECTRIC FIELD DISTRIBUTIONS; EXPERIMENTAL MODELING; FINITE ELEMENT METHOD SIMULATION; PIEZOELECTRIC COEFFICIENT; PIEZOELECTRIC PROPERTY; PIEZORESPONSE FORCE MICROSCOPY; TESTING CONFIGURATIONS;

FINITE ELEMENT METHOD;

EID: 84949564468     PISSN: None     EISSN: 2072666X     Source Type: Journal    
DOI: 10.3390/mi6091236     Document Type: Article

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