Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in - Ga2O3 solar-blind ultraviolet photodetectors

Applied Physics Letters

Volumn 105, Issue 2, 2014, Pages

  Guo, D Y ^a   Wu, Z P ^a   An, Y H ^a   Guo, X C ^a   Chu, X L ^a   Sun, C L ^a   Li, L H ^b   Li, P G ^a,c   Tang, W H ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b STATE UNIVERSITY OF NEW YORK AT POTSDAM   (United States)

^c ZHEJIANG SCI TECH UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON TRANSPORT PROPERTIES; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR OXYGEN; OHMIC CONTACTS; PHOTODETECTORS; PHOTONS; SCHOTTKY BARRIER DIODES; THIN FILMS;

ELECTRON TRANSPORT; EPITAXIAL THIN FILMS; LASER MOLECULAR BEAM EPITAXY; OHMIC-SCHOTTKY CONVERSIONS; PHOTOGENERATED CARRIERS; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SOLAR BLIND ULTRAVIOLET;

OXYGEN VACANCIES;

EID: 84904728002     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4890524     Document Type: Article

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