Reliability concerns for HfO2/Si devices: Interface and dielectric traps

IEEE International Integrated Reliability Workshop Final Report

Volumn 2002-January, Issue , 2002, Pages 102-107

  Kang, Andrew Y ^a   Lenahan, Patrick M ^a   Conley, John F ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

Charge trapping; Defects; Hahium oxide; Interface

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; CAPACITANCE; CHARGE TRAPPING; DANGLING BONDS; ELECTRONS; ELECTROSPINNING; HAFNIUM OXIDES; IRRADIATION; MAGNETIC MOMENTS; SPIN DYNAMICS;

ATOMIC-LAYER DEPOSITION; CHARGE-TRAPPING; DEVICE INTERFACES; ELECTRON SPIN RESONANCE MEASUREMENTS; GAMMA IRRADIATION; HAHIUM OXIDE; SI DEVICES; SILICON DANGLING BOND; ULTRAVIOLET ILLUMINATION; VACUUM ULTRAVIOLETS;

GAMMA RAYS;

EID: 84949204383     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2002.1194243     Document Type: Conference Paper

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